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Details, datasheet, quote on part number:QS5U27
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Datasheet text preview:
QS5U27
Transistor
Small switching (-20V, -1.5A)
QS5U27
!Features 1) The QS5U27 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive (2.5V). 4) The independently connected Schottky barrier diode have a low forward voltage. !Applications load switch, DC/DC conversion !Structure ·Silicon P-channel MOS FET ·Schottky Barrier DIODE !Equivalent circuit
(5) (4)
!External dimensions (Units : mm)
2.8
TSMT5
0.4 (1)
1.6
0~0.1
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain
(3)
(4)
0.95 0.95 1.9 2.9
(2)
(5)
0.3~0.6
Each lead has same dimensions
Abbreviated symbol : U27
2
!Packaging specifications
Package Type QS5U27 Code Basic ordering unit (pieces) Taping TR 3000
(1) 1 ESD protection diode 2 Body diode 1 (2) (3)
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain
A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Symbol VRM VR IF IFSM Tj Symbol PD Tstg Limits -20 ±12 ±1.5 ±6.0 -0.75 -3.0 150 Limits 25 20 1.0 3.0 125 Limits 1.0 -40~+125 Unit V V A A 1 A A 1 °C Unit V V A A 2 °C Unit W / TOTAL 3 °C
Channel temperature Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Parameter Total power dispation Range of strage temperature
1 Pw10µs, Duty cycle1% 2 60Hz · 1cyc. 3 Mounted on a ceramic board.
1.0MAX
0.16
0.85
0.7
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QS5U27
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Gate-source leakage IGSS - Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - Gate threshold voltage VGS (th) -0.7 - Static drain-source on-starte - RDS (on) resistance - Forward transfer admittance 1.0 Yfs Input capacitance Ciss - Output capacitance Coss - Reverse transfer capacitance - Crss Tum-on delay time td (on) - Rise time tr - Tum-off delay time - td (off) Fall time tf - Total gate charge Qg - Gate-source charge Qgs - Gate-drain charge Qgd -
Pulsed
Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1
Max. ±10 - -1 -2.0 200 240 340 - - - - - - - - - - -
Unit µA V µA V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±12V, VDS=0V ID=-1mA, VGS=0V VDS=-20V, VGS=0V VDS=-10V, ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15V VGS=-4.5V RL=20 RGS=10 VDD -15V VGS=-4.5V ID=-1.5A
!Body diode (Source-drain)
Parameter Forward voltage Symbol VSD Symbol VF IR Min. - Min. - - Typ. - Typ. - - Max. -1.2 Max. 0.45 200 Unit V Unit V µA IF=1.0A VR=20V Conditions IS=-0.75A, VGS=0V Conditions
Parameter Forward voltage Reverse leakage
!Electrical characteristic curves
10
1
0.1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VDS=-10V Pulsed
1000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=-4.5V Pulsed
1000
VGS=-4V Pulsed
DRAIN CURRENT : -ID (A)
100
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
10 0.1
1
10
10 0.1
1
10
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
Fig.1 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000 VGS=-2.5V Pulsed
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current ()
ID=-0.75A ID=-1.5A
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000 Ta=25°C Pulsed
400 350 300 250 200 150 100 50 0 0 2 4 6 8
Ta=25°C Pulsed
100
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100
VGS=-2.5V VGS=-4.0V VGS=-4.5V
10 0.1
1
10
10
12
10 0.1
1
10
DRAIN CURRENT : -ID (A)
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( )
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QS5U27
Transistor
REVERCE DRAIN CURRENT : -IDR (A)
10 VGS=0V Pulsed 10000 Ta=25°C f=1MHZ VGS=0V
1000
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C VDD=-15V VGS=-4.5V RG=10 Pulsed
100
td(off)
tf
Ciss
0.1
100
Coss Crss
10
td(on) tr
0.01
0
0.5
1
1.5
2
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : -VSD (V)
DRAIN-SOURCE VOLTAGE : -VDS (V)
DRAIN CURRENT : -ID (A)
Fig.7 Reverse Drain Current vs. Source-Drain Current
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
8
GATE-SOURCE VOLTAGE : VGS (V)
7 6 5 4 3 2 1 0 0 1 2 3 4
Ta=25°C VDD=-15V ID=-1.5A RG=10 Pulsed
5
6
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
!Measurement circuits
Pulse Width VGS ID RL D.U.T. RG VDD VDS td(on) ton 90% tr td(off) toff 90% tr 10% VDS VGS 10% 50% 90% 50% 10%
Fig.11 Switching Time Measurement Circuit
Fig.12 Switching Waveforms
VG VGS ID RL IG(Const) D.U.T. RG VDD VDS VGS Qgs Qgd Qg
Charge
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveforms
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