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Details, datasheet, quote on part number:RB051L-40
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Datasheet text preview:
RB051L-40
Diodes
Schottky barrier diode
RB051L-40
Applications High frequency rectification For switching power supply External dimensions (Units : mm)
1.5±0.2 CATHODE MARK
Features 1) Compact power mold type. (PMDS) 2) Ultra low VF. (VF=0.29V Typ. at 1A) 3) VRM=40V guaranteed.
4.5±0.2
1.2±0.3
3
1
0.1 +0.02 -0.1
2.6±0.2
2.0±0.2
Construction Silicon epitaxial planar
ROHM : PMDS EIAJ : - JEDEC : SOD-106
, ·····Date of manufacture EX. 1999.129, C
Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current (60Hz · 1 ) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 3.0 70 125 -40~+125 Unit V V A A °C °C
TL 90°C Max. 180° half sine wave when mounted on an alumina substrate (82 × 30 × 1.0 mm)
Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Symbol VF1 VF2 IR1 IR2
Typ. - - - -
Max. 0.35 0.45 1.0 150
Unit V V mA µA
Conditions IF=1.0A IF=3.0A VR=20V VR=15V
Reverse current
5.0±0.3
RB051L-40
Diodes
Electrical characteristic curves (Ta = 25°C)
10 100m
1000
1
10m 75°C
1m
100m
5° C
TERMINAL CAPACITANCE : CT (pF)
Ta=125°C
FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A)
100
°C
25° C
12
75
10m
-25 °C
100µ
25°C
Ta=
10µ
-25°C
1m 0
0.1
0.2
0.3
0.4
0.5
1µ 0
10
20
30
40
50
10 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
DC D=0.8
IF IO Tp T D=Tp / T VR=VRM / 2
DC D=0.8
Tp
FORWARD POWER DISSIPATION : PF (W)
5.0
5.0
IF IO T
1.4
D=0.8
DC
1.2 1.0 0.8 0.6
D=0.1 D=0.05 sine D=0.3 D=0.2
4.0
D=0.5
4.0
D=0.5
D=Tp / T VR=VRM / 2
D=0.5
3.0
sine D=0.3 D=0.2
3.0
sine wave D=0.3 D=0.2
2.0
D=0.1 D=0.05
2.0
D=0.1 D=0.05
IF
0.4
Tp
IO T D=Tp / T Tj=Tj Max.
1.0
1.0
0.2 0 0
0 0
25
50
75
100
125
0 0
25
50
75
100
125
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
AMBIENT TEMPERATURE : Ta (°C)
LEAD TEMPERATURE : TL (°C)
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
Fig. 4 Derating curve (IO - Ta)
Fig. 5 Derating curve (IO - TL) (When mounted on almina PCBs)
Fig. 6 Forward power dissipation characteristics
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
REVERSE POWER DISSIPATION : PR (W)
0.50
VR
5.0
DC
IF
0.40
Tj=Tj Max. 0
0.30
Tp T Tj=Tj Max. D=Tp / T
VR
D=0.05 D=0.1 D=0.2 D=0.3 D=0.5
DC
D=0.8
IO Tp T D=Tp / T VR=VRM / 2
4.0
D=0.5
3.0
sine D=0.3 D=0.2
0.20
sine
2.0
D=0.1 D=0.05
0.10
D=0.8
1.0
0 0
2
4
6
8
10 12 14 16 18 20
0 0
25
50
75
100
125
REVERSE VOLTAGE : VR (V)
AMBIENT TEMPERATURE : Ta (°C)
Fig. 7 Reverse power dissipation characteristics
Fig. 8 Derating curve (when mounted on a glass epoxy PCBs board)
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