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Details, datasheet, quote on part number:RB083L-20
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Datasheet text preview:
RB083L-20
Diodes
Schottky barrier diode
RB083L-20
!Applications High frequency rectification For switching power supply !External dimensions (Units : mm)
1.5±0.2
!Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) IO=5A guaranteed despite the size.
CATHODE MARK
4.5±0.2
1.2±0.3
5
7
0.1 +0.02 -0.1
2.0±0.2 2.6±0.2
!Construction Silicon epitaxial planar
ROHM : PMDS EIAJ : - JEDEC : SOD-106
Date of manufacture EX. 1999.12 9,C
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Symbol VRM VR IO IFSM Tj Tstg Limits 25 20 5 70 125 -40~+125 Unit V V A A °C °C
Peak forward surge current
(60Hz 1 )
Junction temperature Storage temperature
When mounted on alumina PCBs (82×30×1.0mm), Tc Max.=90°C
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF IR
Min. - - Typ. - -
Max. 0.39 500
Unit V µA
Conditions IF=3.0A VR=20V
5.0±0.3
RB083L-20
Diodes
!Electrical characteristic curves (Ta=25°C)
10
Ta=125°C
1
CAPACITANCE BETWEEN TERMINALS : CT (pF)
10000
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
100m
1
Ta=125°C
10m
1000
100m
Ta=75°C
Ta=75°C
1m Ta=25°C 100µ
100
10m
Ta=25°C
1m 0
0.1
0.2
0.3
0.4
0.5
10µ
0
10
20
30
40
10 0
10
20
30
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Cpacitance between terminals characteristics
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
7.0 DC 6.0 D=0.8 5.0 4.0 D=0.5 sine wave 3.0 D=0.3 D=0.2 2.0 D=0.1 D=0.05 1.0 0.0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C)
8.0 7.0 6.0 5.0 4.0 3.0
DC D=0.8 D=0.5 sine wave D=0.3 D=0.2
D=0.1 2.0 D=0.05 1.0 0.0 0 25 50 75 100 125 CASE TEMPERATURE : Tc (°C)
Fig.4 Derating curve (lo-Ta) (When mounted on alumina PCBs)
Fig.5 Derating curve (lo-Tc) (When mounted on alumina PCBs)
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