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Details, datasheet, quote on part number:RN142S
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Datasheet text preview:
RN142S
Diodes
PIN diode
RN142S
Application High frequency switching External dimensions (Units : mm)
0.3±0.05 CATHODE MARK 0.12±0.05
Features 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity.
1.2±0.05
K
0.3±0.05 0.8±0.05
1.6±0.1
0.6±0.1
Construction Silicon epitaxial planer
ROHM : EMD2 EIAJ : JEDEC :
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage Forward current Power dissipation Junction temperature Storage temperature
Symbol VR IF Pd Tj Tstg
Limits 60 100 150 150 -55+150
Unit V mA mW °C °C
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminal Forward resistance Symbol VF IR CT rF Min. - - - - - Typ. - - - - - Max. 1.0 0.1 0.45 3.0 2.0 Unit V µA pF IF=10mA VR=60V VR=1.0V, f=1.0MHz IF=3mA, f=100MHz IF=10mA, f=100MHz Conditions
Please pay attention to static electricity when handling.
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RN142S
Diodes
Electrical characteristic curves (Ta=25°C)
150°C 125°C 75°C 10 25°C -25°C 1
150°C
REVERSE CURRENT : IR (A)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100
FORWARD CURRENT : IF (mA)
10µ 1µ 100n 10n 1n 100p 10p 0 125°C
0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 2 4 6 8 10
f=1.8GHz f=900MHz f=1MHz
75°C 25°C
0.1 200
400
600
800
1000
1200
20
40
60
FORWARD VOLTAGE : VF (mV)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward caharacteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance vs. Reverse voltage
3.5
FOWARD RESISTANCE : RF ()
3 2.5
f=100MHz
f=900MHz 2 1.5 1 0.5 0 0 2 4 6 8 10 f=1.8GHz
FORWARD CURRENT : IF (mA)
Fig.4 Forward resistance vs. Forward current
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