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Part: RPT-37PB3F
Category:
Sensors
Description:
Company: ROHM Electronics
Datasheet: Download RPT-37PB3F datasheet File size : 490 kB
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Datasheet text preview:
RPT-37PB3F
Sensors
Phototransistor, top view type
RPT-37PB3F
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. It is possible to distinguish the polarity by the shape of ramp type.
!Applications Optical control equipment Receiver for sensors
!External dimensions (Units : mm)
3.8±0.3 3.1±0.2
5.2±0.3 1.3
!Features 1) High sensitivity. 2) Almost no effect from stray light.
Notes : 1. Unspecfied tolerance shall be ±0.2. 2. Measurement in the bracket are that of lead pin at base the mold. 3. Dimension in parenthesis are show for reference.
2
1
(2.5)
2.5±1
Min.24
2- 0.5
Max.1
4-0.6
Internal connection diagram
1
2
Emitter
Collector
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Limits 32 5 30 150 -25~+85 -30~+100 Unit V V mA mW °C °C
!Electrical and optical characteristics (Ta = 25°C)
Parameter Light current Dark current Peak sensitivity wavelength Collector-emitter saturation voltage Half-angle Response time Symbol IC ICEO Min. 2.0 - - - - - Typ. - - 800 - ±36 10 Max. - 0.5 - 0.4 - - Unit mA µA nm V deg µs Conditions VCE=5V, E=500LX VCE=10V(Black box) - IC=1mA, E=500LX - VCC=5V, IC=1mA, RL=100
P
VCE(sat)
1 / 2
tr·tf
1/2
RPT-37PB3F
Sensors
!Electrical and optical characteristic curves
1000
8
RELATIVE LIGHT CURRENT : IC (%)
VCE=5V
DARK CURRENT : ICEO (nA)
1000
500
LIGHT CURRENT : IC (mA)
6
100 VCE=10V VCE=20V VCE=30V
200 100 50
10
4
1
20 10 -25 0 25 50 75 100
2
0.1 -25 0 25 50 75 100
0
250
500
750
1000
1250
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta (°C)
ILLUMINANCE : E (Lx)
Fig.1 Dark current vs. ambient temperature
Fig.2 Relative output vs. ambient temperature
Fig.3 Light current vs. irradiance
100
10
RELATIVE SENSITIVITY : IC (%)
LIGHT CURRENT : IC (mA)
COLLECTOR DISSIPATION : PC (mW)
160
8
E=1000Lux 750Lux
75
120
6
50
4
80
500Lux 250Lux
25
2 0 0
40
2
4
6
8
10
12
14
16
0 400
600
800
1000
1200
1600
0 -25
0
25
50
75
100
COLLECTOR-EMITTER VOLTAGE : VCE (V)
OPTICAL WAVELENGTH : (nm)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Output characteristics
Fig.5 Spectral sensitivity
Fig.6 Collector dissipation vs. ambient temperature
1000
30° 40° 80
100 RL=1k RL=500
60° 70° 80° 90° 100
50° 60
10
40
RL=100 1 0.1
20
1
10
80
60
40
20
0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT (deg)
COLLECTOR CURRENT : IC (mA)
RELATIVE LUMINOUS INTENSITY (%)
Fig.7 Response time vs. collector current
Fig.8 Directional pattern
RELATIVE LUMINOUS INTENSITY (%)
Ta=25°C VCE=5V
20°
10°
0°
100
RESPONSE TIME : tr (µs)
2/2
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