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Part: K4H1G0638B-TC/LA2
Category:
Memory
-> DRAM
-> DDR SDRAM
-> 1 Gb
Description: Description = K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ;; Organization = St.256Mx4 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = AA,A2,B0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Customer Sample(Aug.'03) ;; Comments = Stacked
Company: Samsung Semiconductor, Inc.
Datasheet: Download K4H1G0638B-TC/LA2 datasheet File size : 357 kB
Request For quote: Find where to buy K4H1G0638B-TC/LA2
Datasheet text preview:
DDR SDRAM stacked 1Gb B-die (x4/x8)
DDR SDRAM
Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1
Rev. 1.1 August. 2003
DDR SDRAM stacked 1Gb B-die (x4/x8)
st. 1Gb B-die Revision History
Revision 0.0 (May, 2003) - First version for internal review. Revision 1.0 (June, 2003) - Deleted "B3" speed. Revision 1.1 (August, 2003) - Corrected typo.
DDR SDRAM
Rev. 1.1 August. 2003
DDR SDRAM stacked 1Gb B-die (x4/x8)
Key Features
· Double-data-rate architecture; two data transfers per clock cycle · Bidirectional data strobe DQS · Four banks operation · Differential clock inputs(CK and CK) · DLL aligns DQ and DQS transition with CK transition · MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) · All inputs except data & DM are sampled at the positive going edge of the system clock(CK) · Data I/O transactions on both edges of data strobe · Edge aligned data output, center aligned data input · DM for write masking only (x4, x8) · Auto & Self refresh · 7.8us refresh interval(8K/64ms refresh) · Maximum burst refresh cycle : 8 · 66pin TSOP II package
DDR SDRAM
Ordering Information
Part No. K4H1G0638B-TC/LAA K4H1G0638B-TC/LA2 K4H1G0638B-TC/LB0 K4H1G0738B-TC/LAA K4H1G0738B-TC/LA2 K4H1G0738B-TC/LB0 st.128M x 8 st.256M x 4 Org. Max Freq. AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) SSTL2 66pin TSOP II SSTL2 66pin TSOP II Interface Package
Operating Frequencies
AA(DDR266@CL=2.0) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP *CL : CAS Latency 133MHz 133MHz 2-2-2 A2(DDR266@CL=2.0) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Rev. 1.1 August. 2003
Others parts begin by k4
K4-1 K4-2 K4-3 K4-4 K4-5 K4-6 K4-7 K4-8 K4-9
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