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Part: K6R4004C1C-I
Category:
Memory
-> SRAM
-> Async. SRAM
-> 4 Mb
-> -> Fast SRAM
Description: Description = K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 160,150,140 ;; Standby Current(mA) = 60,10 ;; Package = 32SOJ ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download K6R4004C1C-I datasheet File size : 158 kB
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Datasheet text preview:
K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I
Document Title
1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
PRELIMINARY CMOS SRAM
Revision History
Rev No. Rev. 0.0 R e v . 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1 . 3 Changed ISB1 to 20mA 2 . 1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 M a r . 29. 1999 Remark Preliminary Preliminary
Rev. 2.0
A u g . 19. 1999
Preliminary
2.2 Relax Absolute Maximum Rating. Item V o l t a g e on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3 . 2 Update D.C parameters and 10ns part. ICC 190mA 185mA 180mA Previous Isb 70mA Is b 1 20mA ICC 160mA 150mA 140mA 130mA Current Isb 60mA Isb1 10mA Previous -0.5 to 7.0 Current - 0 . 5 to Vcc+0.5 M a r . 27. 2000 Final
10ns 12ns 15ns 20ns
3 . 3 Added Extended temperature range Rev. 4.0 Delete 20ns speed bin S e p . 24. 2001 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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R e v 4.0 S e p t e m b e r 2001
K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I
1M x 4 Bit (with OE)High-Speed CMOS Static RAM
FEATURES
· Fast Access Time 10,12,15ns(Max.) · Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4004C1C-10 : 160mA(Max.) K6R4004C1C-12 : 150mA(Max.) K6R4004C1C-15 : 140mA(Max.) · Single 5.0V ±10% Power Supply · TTL Compatible Inputs and Outputs · I/O Compatible with 3.3V Device · Fully Static Operation - No Clock or Refresh required · Three State Outputs · Center Power/Ground Pin Configuration · Standard Pin Configuration K6R4004C1C-J : 32-SOJ-400
PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
T h e K6R4004C1C is a 4,194,304-bit high-speed Static Random A c c e s s Memory organized as 1,048,576 words by 4 bits. The K 6 R 4 0 0 4 C 1 C uses 4 common input and output lines and has an output enable pin which operates faster than address a c c e s s time at read cycle. The device is fabricated using SAMS U N G s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K 6 R 4 0 0 4 C 1 C is packaged in a 400 mil 32-pin plastic SOJ.
PIN CONFIGURATION(Top View)
A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 A19 A18 A17 A16 A15 OE
ORDERING INFORMATION
K6R4004C1C-C10/C12/C15 K6R4004C1C-E10/E12/E15 K6R4004C1C-I10/I12/I15 C o m m e r c i a l Temp. E x t e n d e d Temp. Industrial Temp.
A1 A2 A3 A4 CS I/O1
26 I/O4
F U N C T I O N A L BLOCK DIAGRAM
C l k Gen.
A0 A1
Vcc Vss I/O2 WE A5 A6
SOJ
25 24
Vss Vcc
P r e - C h a r g e Circuit
23 I/O3 22 21 20 19 18 A14 A13 A12 A11 A10
R o w Select
A2 A3 A4 A5 A6 A7 A8 A9 I/O 1~I/O4
A7
Memory Array 1 0 2 4 Rows 1 0 2 4 x 4 Columns
A8 A9
17 N.C
Data Cont. CLK Gen.
I/O Circuit C o l u m n Select
PIN FUNCTION
Pin Name A 0 - A19 WE P i n Function Address Inputs W r i t e Enable C h i p Select O u t p u t Enable Data Inputs/Outputs Power(+5.0V) Ground N o Connection
A10 A12 A 14 A 1 6 A18 A11 A13 A15 A 17 A19
CS OE I/O1 ~ I/O 4 V CC V SS N.C
CS WE OE
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R e v 4.0 S e p t e m b e r 2001
K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I
A B S O L U T E MAXIMUM RATINGS*
Parameter V o l t a g e on Any Pin Relative to VSS V o l t a g e on VCC Supply Relative to VSS Power Dissipation Storage Temperature O p e r a t i n g Temperature Commercial Extended Industrial Symbol V I N, VOUT V CC PD T STG TA TA TA Rating -0.5 to VCC+0.5 -0.5 to 7.0 1.0 - 6 5 to 150 0 to 70 -25 to 85 -40 to 85
PRELIMINARY CMOS SRAM
Unit V V W °C °C °C °C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS* (T A=0 to 70°C)
Parameter S u p p l y Voltage Ground I n p u t High Voltage I n p u t Low Voltage Symbol V CC V SS V IH V IL Min 4.5 0 2.2 -0.5** Typ 5.0 0 Max 5.5 0 V CC+0.5*** 0.8 Unit V V V V
* The above parameters are also guaranteed at extended and industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. *** VIH (Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA.
D C AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter I n p u t Leakage Current O u t p u t Leakage Current O p e r a t i n g Current Symbol IL I IL O ICC V IN=V S S to V CC C S =VIH or OE=V IH or WE = VIL V OUT=V S S to VCC M i n . Cycle, 100% Duty C S =VIL, VIN= VIH or VIL, IOUT=0mA Com. 10ns 12ns 15ns Ext. Ind. 10ns 12ns 15ns Standby Current ISB IS B 1 O u t p u t Low Voltage Level O u t p u t High Voltage Level V OL V OH V OH1** M i n . Cycle, CS =VIH f = 0 M H z , CSVCC-0.2V, V IN V CC- 0 . 2 V or VIN0.2V IOL = 8 m A IOH= - 4 m A IOH1= - 0 . 1 m A T e s t Conditions Min -2 -2 2.4 Max 2 2 160 150 140 175 165 155 60 10 0.4 3.95 V V V mA Unit µA µA mA
* The above parameters are also guaranteed at extended and industrial temperature range. ** VCC=5.0V±5%, Temp.=25°C.
C A P A C I T A N C E * (TA=25 °C, f=1.0MHz)
Item I n p u t / O u t p u t Capacitance I n p u t Capacitance
* Capacitance is sampled and not 100% tested.
Symbol C I/O CIN
Test Conditions V I/O= 0 V V IN= 0 V
MIN -
Max 8 7
Unit pF pF
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R e v 4.0 S e p t e m b e r 2001
Others parts begin by k6
K6-1 K6-2 K6-3 K6-4 K6-5 K6-6 K6-7 K6-8 K6-9 K6-10 K6-11
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