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Part: K6R4004C1D-12
Category:
Memory
-> SRAM
-> Async. SRAM
-> 4 Mb
-> -> Fast SRAM
Description: Description = K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 65 ;; Standby Current(mA) = 20,5 ;; Package = 32SOJ ;; Production Status = Mass Production ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download K6R4004C1D-12 datasheet File size : 158 kB
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Datasheet text preview:
K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY CMOS SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 History Initial release with Preliminary. Change Icc. Isb and Isb1 Item ICC(Commercial) 10ns 12ns 15ns 10ns 12ns 15ns Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 November, 3. 2001 Remark Preliminary Preliminary
ICC(Industrial) ISB ISB1
Rev. 0.2
1. Correct AC parameters : Read & Write Cycle mA 2. Delete Low Ver. 3. Delete Data Retention Characteristics 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns
November, 3. 2001
Preliminary
Rev. 0.3
December, 18. 2001 Previous 85mA 75mA Current 75mA 65mA
Preliminary
Rev. 1.0
1. Final datasheet release. 2. Delete 12ns speed bin. 3. Delete UB,LB releated AC characteristics and timing diagram. 4. Correct Read Cycle time waveform(2).
July, 09, 2002
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 1.0 July 2002
K6R4004C1D
4Mb Async. Fast SRAM Ordering Information
Org. 1M x4 Part Number K6R4004C1D-JC(I) 10 K6R4004V1D-JC(I) 08/10 512K x8 K6R4008C1D-J(T)C(I) 10 K6R4008V1D-J(T)C(I) 08/10 256K x16 K6R4016C1D-J(T,E)C(I) 10 K6R4016V1D-J(T,E)C(I,L,P) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10 8/10 10 8/10 10 8/10 J : 36-SOJ T : 44-TSOP2
J : 44-SOJ T : 44-TSOP2 E : 48-TBGA
PRELIMINARY CMOS SRAM
PKG J : 32-SOJ Temp. & Power C : Commercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range L : Commercial Temperature ,Low Power Range P : Industrial Temperature ,Low Power Range
-2-
Rev 1.0 July 2002
K6R4004C1D
1M x 4 Bit High-Speed CMOS Static RAM
FEATURES
· Fast Access Time 10ns(Max.) · Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004C1D-10 : 65mA(Max.) Single 5.0Vą10% Power Supply · TTL Compatible Inputs and Outputs · Fully Static Operation - No Clock or Refresh required · Three State Outputs · Center Power/Ground Pin Configuration · Standard Pin Configuration K6R4004C1D-J : 32-SOJ-400 · Operating in Commercial and Industrial Temperature range.
PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1D is packaged in a 400 mil 32-pin plastic SOJ.
PIN CONFIGURATION(Top View)
A0 A1 A2 A3 A4 CS I/O1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 A19 A18 A17 A16 A15 OE
26 I/O4
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O4
Vcc Vss
SOJ
25 24
Vss Vcc
Pre-Charge Circuit
I/O2 WE A5
23 I/O3 22 21 20 19 18 A14 A13 A12 A11 A10
Row Select
A6
Memory Array 1024 Rows 1024 x 4 Columns
A7 A8 A9
17 N.C
Data Cont. CLK Gen.
A 10
I/O Circuit Column Select
PIN FUNCTION
Pin Name A0 - A19 Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection
A12 A14 A16 A18 A11 A13 A15 A17 A19
WE CS OE
CS WE OE
I/O1 ~ I/O4 VCC VSS N.C
-3-
Rev 1.0 July 2002
Others parts begin by k6
K6-1 K6-2 K6-3 K6-4 K6-5 K6-6 K6-7 K6-8 K6-9 K6-10 K6-11
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