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Part: K9K1216Q0C-HIB0
Category:
Memory
-> Flash
-> NAND Flash
-> 512M bit
Description: Description = K9K1216Q0C 32M X 16 Bit NAND Flash Memory ;; Organization = 32Mx16 ;; Operating Voltage(V) = 1.7~1.95 ;; Temperature = C,i ;; Speed(ns) = 50 ;; Package = 63TBGA ;; Production Status = Mass Production ;; Comments = 0.12um
Company: Samsung Semiconductor, Inc.
Datasheet: Download K9K1216Q0C-HIB0 datasheet File size : 881 kB
Request For quote: Find where to buy K9K1216Q0C-HIB0
Datasheet text preview:
K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) 4. Add the specification of Block Lock scheme.(Page 29~32) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 2.0 1. The Maximum operating current is changed. Read : Icc1 20mA-->30mA Program : Icc2 20mA-->40mA Erase : Icc3 20mA-->40mA The min. Vcc value 1.8V devices is changed. K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9K1208U0C-HCB0,HIB0 K9K1208Q0C-HCB0,HIB0 K9K1216U0C-HCB0,HIB0 K9K1216Q0C-HCB0,HIB0 Errata is added.(Front Page)-K9K12XXQ0C tWC tWP tRC tREH tRP tREA tCEA Specification 45 25 50 15 25 30 45 Relaxed value 60 40 60 20 40 40 55 1. Max. Thickness of TBGA packge is changed. 0.09±0.10(Before) --> 1.10±0.10(After) 2. New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) 2.5 1. The guidence of LOCKPRE pin usage is changed. Don' leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTOt READ, connect it Vss.(Before) --> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it N.C(After) 2. 2.65V device is added. 3. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) Jul. 4th 2003 Jan. 17th 2003 Preliminary
Draft Date
Sep. 12th 2002 Jan. 3rd 2003
Remark
Advance
2.1
Mar. 5th 2003
Preliminary
2.2
Mar. 13rd 2003
2.3
Mar. 17th 2003
2.4
Apr. 4th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung' Flash web site. s http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
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K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
2.6 1. tREA value of 1.8V device is changed. K9K12XXQ0C : tREA 30ns --> 35ns 2. Errata is deleted.
Draft Date
Aug. 20th. 2003
Remark
Note : For more detailed features and specifications including FAQ, please refer to Samsung' Flash web site. s http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
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K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST.
Part Number K9K1208Q0C-D,H K9K1216Q0C-D,H K9K1208D0C-D,H K9K1216D0C-D,H K9K1208U0C-D,H K9K1216U0C-D,H 2.7 ~ 3.6V 2.4 ~ 2.9V Vcc Range 1.70 ~ 1.95V Organization X8 X16 X8 X16 X8 X16 TBGA PKG Type
FEATURES
· Voltage Supply - 1.8V device(K9K12XXQ0C) : 1.70~1.95V - 2.65V device(K9F12XXD0C) : 2.4~2.9V - 3.3V device(K9K12XXU0C) : 2.7 ~ 3.6 V · Organization - Memory Cell Array - X8 device(K9K1208X0C) : (64M + 2048K)bit x 8 bit - X16 device(K9K1216X0C) : (32M + 1024 K)bit x 16bit - Data Register - X8 device(K9K1208X0C) : (512 + 16)bit x 8bit - X16 device(K9K1216X0C) : (256 + 8)bit x16bit · Automatic Program and Erase - Page Program - X8 device(K9K1208X0C) : (512 + 16)Byte - X16 device(K9K1216X0C) : (256 + 8)Word - Block Erase : - X8 device(K9K1208X0C) : (16K + 512)Byte - X16 device(K9K1216X0C) : ( 8K + 256)Word · Page Read Operation - Page Size - X8 device(K9K1208X0C) : (512 + 16)Byte - X16 device(K9K1216X0C) : (256 + 8)Word - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.) · Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.) · Command/Address/Data Multiplexed I/O Port · Hardware Data Protection - Program/Erase Lockout During Power Transitions · Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years · Command Register Operation · Intelligent Copy-Back · Unique ID for Copyright Protection · Package - K9K12XXX0C-DCB0/DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm) - K9K12XXX0C-HCB0/HIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm) - Pb-free Package
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K12XXX0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K12XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
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