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Part: K9K1G08Q0A-J
Category:
Memory
-> Flash
-> NAND Flash
-> 1G bit
Description: Description = K9K1G08Q0A 64M X 16 Bit NAND Flash Memory ;; Organization = 64Mx16 ;; Operating Voltage(V) = 1.70~1.95 ;; Temperature = C,i ;; Speed(ns) = 60 ;; Package = 48TSOP1,63FBGA ;; Production Status = Mass Production ;; Comments = 0.12um,Dual Die(512Mb*2)
Company: Samsung Semiconductor, Inc.
Datasheet: Download K9K1G08Q0A-J datasheet File size : 1100 kB
Request For quote: Find where to buy K9K1G08Q0A-J
Datasheet text preview:
K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A
FLASH MEMORY
Preliminary
Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History
Revision No. History
0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 2. 63FBGA,1.8V product is added. K9K1GXXQ0A-GCB0,GIB0,JCB0,JIB0 Errata is deleted. AC parameters are changed. Before After tWC tWH tWP tRC tREH tRP tREA tCEA 45 15 25 50 15 25 30 45 60 20 40 60 20 40 40 55
Draft Date
Mar. 17th 2003 Jun. 4th 2003
Remark
Preliminary Preliminary
Aug. 1st 2003
0.2
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung' Flash web site. s http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.
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K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A
FLASH MEMORY
Preliminary
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9K1G08Q0A-G,J K9K1G16Q0A-G,J K9K1G08U0A-Y,P K9K1G08U0A-G,J K9K1G08U0A-V,F K9K1G16U0A-Y,P K9K1G16U0A-G,J 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 FBGA WSOP1 TSOP1 FBGA PKG Type FBGA
FEATURES
· Voltage Supply - 1.8V device(K9K1GXXQ0A) : 1.70~1.95V - 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V · Organization - Memory Cell Array - X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit - X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit - Data Register - X8 device(K9K1G08X0A) : (512 + 16)bit x 8bit - X16 device(K9K1G16X0A) : (256 + 8)bit x16bit · Automatic Program and Erase - Page Program - X8 device(K9K1G08X0A) : (512 + 16)Byte - X16 device(K9K1G16X0A) : (256 + 8)Word - Block Erase : - X8 device(K9K1G08X0A) : (16K + 512)Byte - X16 device(K9K1G16X0A) : ( 8K + 256)Word · Page Read Operation - Page Size - X8 device(K9K1G08X0A) : (512 + 16)Byte - X16 device(K9K1G16X0A) : (256 + 8)Word - Random Access : 12µs(Max.) - Serial Page Access : 50ns(Min.)* * K9F12XXQ0A : 60ns(Min.) · Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.) · Command/Address/Data Multiplexed I/O Port · Hardware Data Protection - Program/Erase Lockout During Power Transitions · Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years · Command Register Operation · Intelligent Copy-Back · Unique ID for Copyright Protection · Package - K9K1GXXU0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9K1GXXX0A-GCB0/GIB0 63- Ball FBGA - K9K1G08U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9K1GXXU0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package - K9K1GXXX0A-JCB0/JIB0 63- Ball FBGA - Pb-free Package - K9K1G08U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9K1G08U0A-V,F(WSOPI ) is the same device as K9K1G08U0A-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200µs on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The onchip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08U0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
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K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A
PIN CONFIGURATION (TSOP1)
K9K1G08U0A-YCB0,PCB0/YIB0,PIB0
N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C
FLASH MEMORY
Preliminary
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220F
Unit :mm/Inch
0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.488 MAX 0.50 0.0197 #24 #25 1.00±0.05 0.039±0.002 0.25 0.010 TYP
+0 . 0 7 5
20.00±0.20 0.787±0.008
0.008-0.001
+0 . 0 0 3
0.20 -0.03
+0 . 0 7
#1
12.00 0.472
0.05 0.002 MIN
0.125 0.035
0~8°
0.45~0.75 0.018~0.030
( 0.50 ) 0.020
3
0.005-0.001
+0 . 0 0 3
18.40±0.10 0.724±0.004
1.20 0.047MAX
Others parts begin by k9
K9-1 K9-2 K9-3
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