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Part: K9K1G08R0B
Category:
Memory
-> Flash
-> NAND Flash
Description: 128M x 8 Bit NAND Flash Memory<<<>>>The K9K1G08X0B is a 128M(134,217,728) x 8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit.<<<>>>Its NAND cell provides the most cost-effective solution for the solid state mass storage market.<<<>>>A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : TBD) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs.<<<>>>The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08X0B's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.<<<>>>The K9K1G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Company: Samsung Semiconductor, Inc.
Datasheet: Download K9K1G08R0B datasheet File size : 1100 kB
Request For quote: Find where to buy K9K1G08R0B
Others parts begin by k9
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