Details, datasheet, quote on part number: KBA0301A0M
PartKBA0301A0M
CategoryUnsorted => MCP->Customized
TitleMCP->Customized
DescriptionDescription = KBA0301A0M 64M Bit (4Mx16) Four Bank Nor Flash Memory *2 / 32M Bit (2Mx16) Utram / 8M Bit (512Kx16) SRAM ;; Combination = 128M NOR(64Mx2)+32M UtRAM+8M SRAM ;; Speed = Nor(85ns),NAND(10us,50ns),UtRAM(85ns) ;; Package = 80TBGA ;; PKG Size(mm) = 10x11x1.4 ;; Production Status = Mass Production ;; Comments = 4Stack
CompanySamsung Semiconductor, Inc.
DatasheetDownload KBA0301A0M datasheet
  

 

Features, Applications

64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM

0.0 0.1 Initial Draft Revise - Added NOR Flash Boot Block Architecture 03: Flash 1 - Bottom Boot Block Flash 2 - Top Boot Block 04: Flash 1 - Top Boot Block Flash 2 - Bottom Boot Block

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

The KBA0101A0M/KBA0201A0M featuring single 3.0V power supply is a Multi Chip Package Memory which combines two 64Mbit Four Bank Flash and 32Mbit UtRAM and 8Mbit SRAM. The 64Mbit Flash memory is organized 4M x16 bit and 32Mbit UtRAM is organized 2M x16 bit and 8Mbit SRAM is organized x 16 bit. The 64Mbit Flash memory is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can be programmed or erased, when F-WP is low. Using Software Lock Release function, program erase operation can be executed. The 32Mbit UtRAM is fabricated by SAMSUNG' s advanced CMOS technology using one transistor memory cell. The device also supports deep power down mode for low standby current. The 8Mbit SRAM is fabricated by SAMSUNGs advanced full CMOS process technology. The device also supports low data retention voltage for battery back-up operation with low data retention current. The KBA0101A0M/KBA0201A0M is suitable for use in program and data memory of mobile communication system to reduce mount area. This device is available in 80-ball TBGA Type package.

64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM

Power Supply voltage - Flash 3.3V - UtRAM, SRAM to 3.1V Organization - Flash x 16 bit *2 - UtRAM x 16 bit - SRAM x 16 bit Access Time (@2.7V) - Flash : 85 ns, UtRAM : 85 ns, SRAM : 55ns Power Consumption (typical value) - Flash Read Current mA (@5MHz) Sequential Page Read Current mA (@5MHz) Program/Erase Current 35 mA (Max.) Standby mode/Deep Power mode A - UtRAM Operating Current 30 mA Standby Current 80 A Deep Power Down SRAM Standby Current : 0.5 A SRAM Data Retention 1.5 V (min.) Secode(Security Code) Block : Extra 32KW Block (Flash) Block Group Protection / Unprotection (Flash) 128 words Page Program (Flash) Flash Bank Size / 28Mb Flash Endurance : 100,000 Program/Erase Cycles Ambient Temperature ~ 85C Endurance : 100,000 Program/Erase Cycles Package : 80-ball TBGA Type x 10.0 mm, 0.8 mm pitch

Ball Name to DQ15 F-RP F-WP F-VCC VCCS VCCU VCCQU1) VSS UBU LBU UBS LBS F-RY/BY CS1S CS2S CSU OE NC DNU Description Address Input (Flash Memory, UtRAM, SRAM) Address Input (Flash Memory, UtRAM) Address Input (Flash Memory) Data Input/Output Balls (Common) Hardware Reset (Flash Memory) Write Protection (Flash Memory) Power Supply (Flash Memory) Power Supply (SRAM) Power Supply (UtRAM) Data Out Power (UtRAM) Ground (Common) Upper Byte Enable (UtRAM) Lower Byte Enable (UtRAM) Upper Byte Enable (SRAM) Lower Byte Enable (SRAM) Ready/Busy (Flash Memory) Deep Power Down (UtRAM) Chip Enable1 (Flash Memory) Chip Enable2 (Flash Memory) Chip Select1 (SRAM) Chip Select2 (SRAM) Chip Enable (UtRAM) Write Enable (Common) Output Enable (Common) No Connection Do Not Use



SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. -2-

Samsung MCP(4 Stack) Memory Device Type Mitsubishi NOR Flash +Mitsubishi NOR Flash +UtRAM +SRAM NOR Flash Density (Organization) (BankSize) , Block Architecture 64Mbit (x16 Selectable) 4Mb, 28Mb,28Mb) Flash 1: Bottom Boot Block Flash 2: Bottom Boot Block 64Mbit (x16 Selectable) 4Mb, 28Mb,28Mb) Flash 1: Top Boot Block Flash 2: Top Boot Block 64Mbit (x16 Selectable) 4Mb, 28Mb,28Mb) Flash 1: Bottom Boot Block Flash 2: Top Boot Block 64Mbit (x16 Selectable) 4Mb, 28Mb,28Mb) Flash 1: Top Boot Block Flash 2: Bottom Boot Block Access Time Mitsubishi NOR Flash: 85ns Mitsubishi NOR Flash: 85ns UtRAM: 85ns SRAM: 55ns Package = 80 TBGA


 

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