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Part: KM416C254D
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
-> 4 Mb
-> Asynchronous->5V EDO
Description: 256k X 16bit CMOS Dynamic RAM With Extended Data Out
Company: Samsung Semiconductor, Inc.
Datasheet: Download KM416C254D datasheet File size : 1012 kB
Request For quote: Find where to buy KM416C254D
Datasheet text preview:
KM416C254D, KM416V254D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
· Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)
· Extended Data Out Mode operation · 2 CAS Byte/Wrod Read/Write operation · CAS-before-RAS refresh capability · RAS-only and Hidden refresh capability · Self-refresh capability (L-ver only) · TTL(5V)/LVTTL(3.3V) compatible inputs and outputs · Early Write or output enable controlled write Unit : mW 5V(512 Ref.) 605 495 440 · JEDEC Standard pinout · Available in 40-pin SOJ 400mil and 44(40)-pin packages · Triple +5V±10% power supply (5V product) · Triple +3.3V±0.3V power supply (3.3V product)
· Active Power Dissipation Speed -5 -6 -7 · Refresh Cycles Part NO. C254D V254D VCC 5V 3.3V Refresh cycle 512 3.3V(512 Ref.) 255 235
FUNCTIONAL BLOCK DIAGRAM
Refresh period Normal 8ms L-ver 128ms
RAS UCAS LCAS W Control Clocks VBB Generator Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
Refresh Timer
Row Decoder
· Performance Range Speed -5 -6 -7
DQ0 to DQ7
tRAC
50ns 60ns 70ns
tCAC
15ns 15ns 20ns
tRC
84ns 104ns 124ns
tHPC
20ns 25ns 30ns
Remark 5V only 5V/3.3V 5V/3.3V
A0~A8
Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer Column Decoder Memory Array 262,144 x16 Cells
OE DQ8 to DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
KM416C254D, KM416V254D
CMOS DRAM
PIN CONFIGURATION (Top Views)
·KM416C/V254DJ
·KM416C/V254DT
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 N.C N.C W RAS N.C A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 N.C LCAS UCAS OE A8 A7 A6 A5 A4 VSS
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 N.C N.C W RAS N.C A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 N.C LCAS UCAS OE A8 A7 A6 A5 A4 VSS
(SOJ)
(TSOP-II)
Pin Name A0 - A8 DQ0 - 15 VSS RAS UCAS LCAS W OE VCC N.C
Pin Function Address Inputs Data In/Out Ground Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V) No Connection
KM416C254D, KM416V254D
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN,VOUT VCC Tstg PD IOS Rating 3.3V -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50
CMOS DRAM
5V -1.0 to +7.0 -1.0 to +7.0 -55 to +150 1 50
Units V V °C W mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL 3.3V Min 3.0 0 2.0 -0.3*2 Typ 3.3 0 Max 3.6 0 VCC+0.3*1 0.8 Min 4.5 0 2.4 -1.0*2 5V Typ 5.0 0 Max 5.5 0 VCC+1.0*1 0.8 Units V V V V
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC *2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max Parameter Input Leakage Current (Any input 0VINVIN+0.3V, all other input pins not under test=0 Volt) 3.3V Output Leakage Current (Data out is disabled, 0VVOUTVCC) Output High Voltage Level(IOH=-2mA) Output Low Voltage Level(IOL=2mA) Input Leakage Current (Any input 0VINVIN+0.5V, all other input pins not under test=0 Volt) 5V Output Leakage Current (Data out is disabled, 0VVOUTVCC) Output High Voltage Level(IOH=-5mA) Output Low Voltage Level(IOL=4.2mA) Symbol II(L) IO(L) VOH VOL II(L) IO(L) VOH VOL Min -5 -5 2.4 -5 -5 2.4 Max 5 5 0.4 5 5 0.4 Units uA uA V V uA uA V V
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