|
Details, datasheet, quote on part number:KM616FR1010Z
| |
| Part: | KM616FR1010Z |
| Category: | Memory => SRAM => Low Power => 1 Mb |
| Description: | Description = KM616FR1010Z 64K X 16 Super Low Power And Low Voltage Full CMOS SRAM ;; Organization = 64Kx16 ;; Vcc(V) = 1.8~2.7 ;; Speed-tAA(ns) = 300 ;; Operating Temperature = i ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 5 ;; Package = 48CSP ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FR1010Z datasheet File size : 179 kB |
| Request For quote: | Find where to buy KM616FR1010Z
|
| |
Datasheet text preview:
KM616FS1010Z, KM616FR1010Z Family
Document Title
64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets
Preliminary CMOS SRAM
Revision History
Revision No.
0.0
History
Initial Draft - LB, UB controls standby mode Revision - Erase commercial part
Draft Data
June 3, 1997
Remark
Preliminary
0.1
December 16, 1997 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve all right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact SAMSUNG branch offices.
1
Revision 0.1 December 1997
KM616FS1010Z, KM616FR1010Z Family
Preliminary CMOS SRAM
64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM with 48-CSP
FEATURE SUMMARY
· Process Technology : Full CMOS · Organization : 64Kx16 · Power Supply Voltage KM616FS1010 Family : 2.3V ~ 3.3V KM616FR1010 Family : 1.8V ~ 2.7V · Low Data Retention Voltage : 1.5V(Min) · Three state output status and TTL Compatible · Package Type : 48-CSP with 0.75mm ball pitch
GENERAL DESCRIPTION
The KM616FS1010Z and KM616FR1010Z families are fabricated by SAMSUNGs advanced Full CMOS process technology. The families support various operating temperature ranges and have very small size with 0.75 ball pitch and 6 x 8 ball array. The families also support low data retention voltage for battery back-up operations with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) 100@VCC=3.0±0.3V 150@VCC=2.5±0.2V 300@VCC=2.0±0.2V Standby (ISB1, Max) 5µA Operating (ICC2, Max) 80mA 50mA 25mA PKG Type
KM616FS1010ZI KM616FR1010ZI
Industrial(-40~85° C)
2.3~3.3V 1.8~2.7V
48-CSP (6x8 ball area with 0.75mm ball pitch)
48-CSP PIN TOP VIEW
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A
LB
OE
A0
A1
A2
N.C
A0 A1
Vcc Vss Row select Memory array 1024 rows 64×16 columns
B
I/O9
UB
A3
A4
CS
I/O1
A2 A3 A4
C
I/O10
I/O11
A5
A6
I/O2
I/O3
A5 A6 A7
D
Vss
I/O12
N.C
A7
I/O4
Vcc
A14 A15
E
Vcc
I/O13
N.C
N.C
I/O5
Vss
I/O1~I/O8
Data cont Data cont Data cont
I/O Circuit Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O9~I/O16
G
I/O16
N.C
A12
A13
WE
I/O8
A8 A9 A10 A11 A12 A13
H
N.C
A8
A9
A10
A11
N.C
WE
Name CS OE WE
Function Chip Select Input Output Enable input Write Enable Input
Name LB UB Vcc Vss N.C.
Function Lower Byte(I/O1~8) Upper Byte(I/O9~16) Power Ground No Connection
OE UB LB CS
Control Unit
A0~A15 Address Inputs I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 0.1 December 1997
2
KM616FS1010Z, KM616FR1010Z Family
PRODUCT LIST
Industrial Temp Products(-40~85°C) Part Name KM616FS1010ZI-15 KM616FR1010ZI-30 48-CSP, 2.5V/3.0V, 150/100ns 48-CSP, 1.8V/2.5V, 300ns Function
Preliminary CMOS SRAM
Note 1. The meaning of 2.5V/3.0V, 150/100ns is that the operating VCC is ranged from 2.3V(Min) to 3.3V(Max) with speed 150ns @2.5V±0.2 and 100ns @3.0V±0.3. This type of meaning is applied to other notations like the example. 2. In case of KM616FR1010Z-30, there is only one speed bin, 300ns though it supports wide range operating VCC.
FUNCTIONAL DESCRIPTION
CS H L X1) L L L L L L OE X
1)
WE X
1)
LB X
1)
UB X
1)
I / O 1~ 8 High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z Dout Dout High Din Din
Mode Delected Output Disabled Output Disabled Read Read Read Write Write Write
Power Standby Active Standby
H X1) L L L X1) X
1)
H X 1) H H H L L L
X 1) H L H L L H L
X1) H H L L H L L
Active
Active
X1)
1. X means dont care.(Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Soldering temperature and time Symbol VIN,VOUT VCC PD TSTG TA TSOLDER Ratings -0.2 to 3.6V -0.2 to 4.0V 1.0 -55 to 150 -40 to 85 260°C, 5sec(Lead Only) Unit V V W °C °C Remark KM616FS1010ZI KM616FR1010ZI -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 0.1 December 1997
|
|
