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Details, datasheet, quote on part number:KM616FR2000TI-30
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| Part: | KM616FR2000TI-30 |
| Category: | Memory => SRAM => Low Power => 2 Mb |
| Description: | Description = KM616FR2000 128Kx16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 128Kx16 ;; Vcc(V) = 1.8~2.7 ;; Speed-tAA(ns) = 300 ;; Operating Temperature = C,i ;; Operating Current(mA) = 20 ;; Standby Current(uA) = 10 ;; Package = 44TSOP2 ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FR2000TI-30 datasheet File size : 146 kB |
| Request For quote: | Find where to buy KM616FR2000TI-30
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Datasheet text preview:
KM616FV2000, KM616FS2000, KM616FR2000 Family
ocument Title
CMOS SRAM
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 0.1 Design target Initial draft - Add KM616FV2000 Family - Erase KM616FU1000 Family and KM616FS1000 Family supprot 2.3~3.3V operating Vcc. - Concept change high power version to low low power version ISB1=10µA(Max) - Add super low power version with special handling ISB1=2.0µA(Max) - Reduce Icc & Icc1 Write : 25mA to 20mA at Vcc=3.6V(Max) Finalize - Change datasheet format - Erase reverse type package
Draft Date
October 2, 1996 December 1, 1996
Remark
Advance Preliminary
1.0
March 4, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
FEATURES
· Process Technology : Full CMOS · Organization : 128Kx16 · Power Supply Voltage KM616FV2000 Family : 3.0V ~ 3.6V KM616FS2000 Family : 2.3V ~ 3.3V KM616FR2000 Family : 1.8V ~ 2.7V · Low Data Retention Voltage : 1.5V(Min) · Three state output status and TTL Compatible · Package Type : 44-TSOP2-400F
CMOS SRAM
128Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The KM616FV2000, KM616FS2000 and KM616FR2000 families are fabricated by SAMSUNGs advanced Full CMOS process technology. The families support various operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family KM616FV2000 KM616FS2000 KM616FR2000 KM616FV2000I KM616FS2000I KM616FR2000I
1. The parameter is measured with 30pF test load. 2. Super low power product=2µA with special handling.
Operating Temperature
Vcc Range 3.0~3.6V
Speed(ns) 701)/85@VCC=3.3±0.3V 85@VCC=3.0±0.3V 120 /150@VCC=2.5±0.2V
1)
Standby (ISB1, Max)
Operating (ICC2, Max) 80mA 80mA 50mA
PKG Type
Commercial(0~70°C)
2.3~3.3V 1.8~2.7V 3.0~3.6V
3001)@VCC=2.0±0.2V 701)/85@VCC=3.3±0.3V 85@VCC=3.0±0.3V 1201)/150@VCC=2.5±0.2V 3001)@VCC=2.0±0.2V
10µA2)
20mA 80mA 80mA 50mA 20mA
44-TSOP2Forward
Industrial(-40~85°C)
2.3~3.3V 1.8~2.7V
PIN DESCRIPTION
A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 A11 N.C
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A4 A3 A2 A1 A0 A16 A14 A15 A12 A13 I/O1~I/O8
Precharge circuit.
Vcc Vss Memory array 1024 rows 128×16 columns
44-TSOP2 Forward
Row select
Data cont Data cont Data cont
I/O Circuit Column select
I/O9~I/O16
Name CS OE WE A0~A16
Function Chip Select Input Output Enable Input Write Enable Input Address Inputs
Name LB UB Vcc Vss N.C.
Function Lower Byte(I/O1~8) Upper Byte(I/O9~16) Power Ground No Connection
WE OE UB
A9 A8 A5 A6 A7 A11 A10
I/O1~I/O16 Data Inputs/Outputs
Control logic
LB CS
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.0 March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
PRODUCT LIST
Commercial Temperature Products(0~70°C) Part Name KM616FV2000T-7 KM616FV2000T-8 KM616FS2000T-12 KM616FS2000T-15 KM616FR2000T-30 Function 44-TSOP2 F, 70ns, 3.3V, LL 44-TSOP2 F, 85ns, 3.3V, LL 44-TSOP2 F, 120/85ns, 2.5/3.0V, LL 44-TSOP2 F, 150/85ns, 2.5/3.0V, LL 44-TSOP2 F, 300ns, 2.0/2.5V, LL
CMOS SRAM
Industrial Temperature Products(-40~85°C) Part Name KM616FV2000TI-7 KM616FV2000TI-8 KM616FS2000TI-12 KM616FS2000TI-15 KM616FR2000TI-30 Function 44-TSOP2 F, 70ns, 3.3V, LL 44-TSOP2 F, 85ns, 3.3V, LL 44-TSOP2 F, 120/85ns, 2.5/3.0V, LL 44-TSOP2 F, 150/85ns, 2.5/3.0V, LL 44-TSOP2 F, 300ns, 2.0/2.5V, LL
FUNCTIONAL DESCRIPTION
CS H L L L L L L L L OE X
1)
WE X
1)
LB X X
1) 1)
UB X X
1) 1)
I/O1~8 High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Active Active Active Active Active Active Active Active
H X1) L L L X1) X
1)
H X1) H H H L L L
H L H L L H L
H H L L H L L
X1)
1. X means dont care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.2 to 3.6V
2)
Unit V V W °C °C °C -
Remark KM616FV2000, KM616FS2000, KM616FR2000 KM616FV2000I, KM616FS2000I, KM616FR2000I -
-0.2 to 4.0V3) 1.0 -55 to 150 0 to 70 -40 to 85
Soldering temperature and time
TSOLDER 260°C, 5sec (Lead Only)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VIN/VOUT=-0.2 to 3.9V for KM616FV2000 Family. 3. VCC=-0.2 to 4.6V for KM616FV2000 Family
3
Revision 1.0 March 1998
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