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Details, datasheet, quote on part number:KM616FR2000ZI
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| Part: | KM616FR2000ZI |
| Category: | Memory => SRAM => Low Power => 2 Mb |
| Description: | Description = KM616FS2000Z 128K X 16bit Super Low Power And Low Voltage Full CMOS SRAM With 48-CSP(Chip Scale Package) ;; Organization = 128Kx16 ;; Vcc(V) = 2.3~3.3 ;; Speed-tAA(ns) = 100,150 ;; Operating Temperature = i ;; Operating Current(mA) = 80,50 ;; Standby Current(uA) = 10 ;; Package = 48CSP ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FR2000ZI datasheet File size : 186 kB |
| Request For quote: | Find where to buy KM616FR2000ZI
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Datasheet text preview:
KM616FS2000Z, KM616FR2000Z Family
Document Title
128Kx16 Super Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP
Preliminary CMOS SRAM
Revision History
Revision No.
0.0
History
Initialize - Package dimension finalized Revised - Change speed marking method Marking was indicate speed at high power, that change to speed at low power Revised - Remove commercial products.
Draft Data February. 4, 1997
Remark
Preliminary
0.1
April. 17, 1997
Preliminary
0.2
August 17, 1998
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 0.2 August 1998
KM616FS2000Z, KM616FR2000Z Family
Preliminary CMOS SRAM
128Kx16bit Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP(Chip Scale Package)
FEATURES SUMMARY
· Process Technology : Full CMOS · Organization :128Kx16 · Power Supply Voltage KM616FS2000Z Family : 2.3V(Min) ~ 3.3V(Max) KM616FR2000Z Family : 1.8V(Min) ~ 2.7V(Max) · Low Data Retention Voltage : 1.5V(Min) · Three state output status and TTL Compatible · Package Type : 48-CSP with 0.75mm ball pitch
GENERAL DESCRIPTION
The KM616FS2000Z and KM616FR2000Z family are fabricated by SAMSUNGs advanced Full CMOS process technology. The family support various operating temperature ranges and has very small size with 0.75 ball pitch and 6 x 8 ball array. The family also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby Operating (ISB1, Max) (ICC2, Max) 10µA 80mA 50mA 25mA PKG Type
KM616FS2000ZI KM616FR2000ZI
Industrial(-40~85°C)
2.3~3.3V 1.8~2.7V
1001)@VCC=3.0±0.3V 1501)@VCC=2.5±0.2V 3001)@VCC=2.0±0.2V
48-CSP (6x8 ball area with 0.75mm ball pitch)
1. The parameter is measured with 30pF test load.
48-CSP PIN TOP VIEW
1 A B C D E F G H LB I/O9 I/O10 Vss 2 OE UB I/O11 I/O12 I/O13 I/O14 N.C A8 3 A0 A3 A5 N.C N.C A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CS I/O2 I/O4 I/O5 I/O6 WE A11 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
N.C I/O1 I/O3 Vcc Vss
I / O 1~I/O 8
A0 A1 A2 A3 A4 A5 A6 A7 A8 A16
Vcc Vss Row select Memory array 1024 rows 128K×16 columns
Vcc I/O15 I/O16 N.C
Data cont Data cont Data cont
I/O Circuit Column select
I/O7
I/O9~I/O16
I/O8 N.C
A9 A10 A11 A12 A13 A14 A15
Name CS OE WE
Function Chip Select Input
Output Enable Input Input
Name LB UB
Function Lower Byte(I/O1 ~ 8) Upper Byte(I/O9 ~ 16)
WE OE UB LB CS
Control Unit
Write Enable Input
Vcc Power Vss Ground N.C. No Connection
A0~A16 Address Inputs I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 0.2 August 1998
KM616FS2000Z, KM616FR2000Z Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name KM616FS2000Z-15L KM616FR2000Z-30L 48-CSP, 2.5V/3.0V, 150/100ns 48-CSP, 1.8V/2.5V, 300ns Function
Preliminary CMOS SRAM
1. The meaning of 2.5V/3.0V, 150/100ns is that the operating VCC is ranged from 2.3V(Min) to 3.3V(Max) with speed 150ns @2.5V±0.2 and 100ns @3.0V±0.3. This type of meaning is applied to other notations like the example. 2. But in case of KM616FR2000Z-30, there is only one speed bin, 300ns though it supports wide range operating VCC.
FUNCTIONAL DESCRIPTION
CS H L L L L L L L L LB X
1)
UB X
1)
WE X
1)
OE X
1)
I / O 1~ 8 High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z Dout Dout High Din Din
Mode Not Select Output Disable Output Disable Read Read Read Write Write Write
Power Standby Active
X1) H L H L L H L
X 1) H H L L H L L
H X 1) H H H L L L
H X1) L L L X1) X1) X
1)
Active
Active
1. X means dont care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Soldering temperature and time Symbol VIN,VOUT VCC PD TSTG TA TSOLDER Ratings -0.2 to 3.6V -0.2 to 4.0V 1.0 -55 to 150 -40 to 85 260°C, 5sec(Lead Only) Unit V V W °C °C Remark KM616FS2000ZI, KM616FR2000ZI -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Revision 0.2 August 1998
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