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Details, datasheet, quote on part number:KM616FR2010AZI
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| Part: | KM616FR2010AZI |
| Category: | Memory => SRAM => Low Power => 2 Mb |
| Description: | Description = KM616FR2010A 128K X16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 128Kx16 ;; Vcc(V) = 1.7~2.2 ;; Speed-tAA(ns) = 70,100 ;; Operating Temperature = -40~85 ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 3 ;; Package = 48uBGA ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FR2010AZI datasheet File size : 161 kB |
| Request For quote: | Find where to buy KM616FR2010AZI
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Datasheet text preview:
KM616FR2010A Family
Document Title
Advance CMOS SRAM
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
August 6, 1998
Remark
Advance
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office.
-1-
Revision 0.0 August 1998
KM616FR2010A Family
Advance CMOS SRAM
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
· · · · · ·
GENERAL DESCRIPTION
The KM616FR2010A families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Process Technology : Full CMOS Organization : 128K x16 bit Power Supply Voltage : 1.7 ~ 2.2V Low Data Retention Voltage : 1.0V(Min) Three state output status and TTL Compatible Package Type : 48 - CSP with 0.75mm ball pitch
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) 3mA PKG Type
KM616FR2010A
Industrial(-40 ~ 85°C)
1.7 ~ 2.2V
701)/100
48-CSP
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit. Vcc Vss Row Addresses Memory array 1024 rows 128 × 16 columns
A
LB
OE
A0
A1
A2
N.C
B
I/O9
UB
A3
A4
CS
I/O1 Row select
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
N.C
A7
I/O4
Vcc
E
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O1~ I / O 8
Data cont Data cont Data cont
I/O Circuit Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O9~I/O16
G
I/O16
N.C
A12
A13
WE
I/O8
Column Addresses H N.C A8 A9 A10 A11 N.C
48-ball CSP - Top View (Ball Down) Name CS OE WE A0~A16 Function Chip Select Input Output Enable Input Write Enable Input Address Inputs Name Vcc Vss UB LB N.C. Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) No Connection
CS OE WE UB LB
Control Logic
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2Revision 0.0 August 1998
KM616FR2010A Family
PRODUCT LIST
Industrial Temperature Product (-40~85°C) Part Name KM616FR2010AZI-7 KM616FR2010AZI-10 Function 48-CSP with 48 ball, 70ns, 1.8//2.0V 48-CSP with 48 ball, 100ns, 1.8/2.0V
Advance CMOS SRAM
FUNCTIONAL DESCRIPTION
CS H X 1) L L L L L L L L OE X1) X1) H H L L L X1) X
1)
WE X1) X1) H H H H H L L L
LB X1) H L X
1)
UB X1) H X1) L H L L H L L
I / O 1~8 High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Active Active Active Active Active Active Active Active
L H L L H L
X1)
1. X means dont care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.2 to 3.0V -0.2 to 3.6V 1.0 -55 to 150 -40 to 85 Unit V V W °C °C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 0.0 August 1998
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