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Details, datasheet, quote on part number:KM616FR4110ZI
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| Part: | KM616FR4110ZI |
| Category: | Memory => SRAM => Low Power => 4 Mb |
| Description: | Description = KM616FR4110 256K X16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 256Kx16 ;; Vcc(V) = 1.7~2.2 ;; Speed-tAA(ns) = 85,100 ;; Operating Temperature = i ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 5 ;; Package = 48uBGA ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FR4110ZI datasheet File size : 194 kB |
| Request For quote: | Find where to buy KM616FR4110ZI
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Datasheet text preview:
KM616FR4110 Family
Document Title
Advance CMOS SRAM
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revise - Speed bin change : 70/100ns 85/100ns - DC characteristics change IOL : 0.5mA 0.1mA IOH : -0.5mA -0.1mA ISB1 : Super low power product=1µA 2µA IDR : 3/1µA(LL/SL, Vcc=1.5V) 3/2µA(LL/SL, Vcc=1.2V) - 48-CSP package dimension change Die thickness : 0.32mm 0.45mm E : 0.80mm 0.93mm E1 : 0.55mm 0.68mm Errata correction
Draft Date
April 8, 1998 June 27, 1998
Remark
Advance Advance
0.11
August 17, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 0.11 June 1998
KM616FR4110 Family
FEATURES
· · · · · ·
Advance CMOS SRAM
GENERAL DESCRIPTION
The KM616FR4110 families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology : Full CMOS Organization : 256K x16 bit Power Supply Voltage : 1.7 ~ 2.2V Low Data Retention Voltage : 1.0V(Min) Three state output status and TTL Compatible Package Type : 48 - CSP with 0.75mm ball pitch
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) 3mA PKG Type
KM616FR4110
Industrial(-40 ~ 85°C)
1.7 ~ 2.2V
851)/100
48-CSP
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A
LB
OE
A0
A1
A2
CS2 Vcc Vss
B
I/O9
UB
A3
A4
CS1
I/O1
Row Addresses
C
I/O10
I/O11
A5
A6
I/O2
I/O3
Row select
Memory array 2048 rows 128 × 16 columns
D
Vss
I/O12
A17
A7
I/O4
Vcc
E
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O1~I/O8
Data cont Data cont Data cont
I/O Circuit Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
I / O 9~I/O16
G
I/O16
N.C
A12
A13
WE
I/O8 Column Addresses
H
N.C
A8
A9
A10
A11
N.C
48-ball CSP - Top View (Ball Down)
CS1 CS2 OE WE UB
Control Logic
Name C S 1, C S 2 OE WE A 0~A17
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs
Name Vcc Vss UB LB N.C.
Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) No Connection
LB
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2Revision 0.11 June 1998
KM616FR4110 Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name KM616FR4110ZI-8 KM616FR4110ZI-10 Function 48-CSP with 48 ball, 85ns, 1.8/2.0V 48-CSP with 48 ball, 100ns, 1.8/2.0V
Advance CMOS SRAM
FUNCTIONAL DESCRIPTION
CS1 H X1) X
1)
CS 2 X 1) L X
1)
OE X1) X1) X
1)
WE X1) X1) X
1)
LB X1) X1) H L X
1)
UB X1) X1) H X1) L H L L H L L
I/O1~8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Standby Active Active Active Active Active Active Active Active
L L L L L L L L
H H H H H H H H
H H L L L X
1)
H H H H H L L L
L H L L H L
X1) X
1)
1. X means dont care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT V CC PD TSTG TA Ratings -0.2 to 3.0V -0.2 to 3.6V 1.0 -55 to 150 -40 to 85 Unit V V W °C °C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 0.11 June 1998
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