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Details, datasheet, quote on part number:KM616FS1000ZI
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| Part: | KM616FS1000ZI |
| Category: | Memory => SRAM => Low Power => 1 Mb |
| Description: | Description = KM616FS1000Z 64K X 16 Bit Super Low Power And Low Voltage Full CMOS SRAM With 48-CSP(Chip Scale Package) ;; Organization = 64Kx16 ;; Vcc(V) = 2.3~3.3 ;; Speed-tAA(ns) = 100,150 ;; Operating Temperature = i ;; Operating Current(mA) = 80/50 ;; Standby Current(uA) = 5 ;; Package = 48CSP ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616FS1000ZI datasheet File size : 168 kB |
| Request For quote: | Find where to buy KM616FS1000ZI
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Datasheet text preview:
KM616FS1000Z, KM616FR1000Z Family
Document Title
64Kx16 SUper Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP
Preliminary CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
History
- 1st edition - Package Dimension Finalized - 2nd edition - Change speed marking method
Draft Data Feb. 4th, 1997 Apr. 18th, 1997
Remark
Preliminary
Rev. 0.1
Preliminary
Marking was indicate speed at high power, that change to speed at low power
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision 0.1 April 1997
KM616FS1000Z, KM616FR1000Z Family
64Kx16 bit Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP(Chip Scale Package)
FEATURES SUMMARY
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Preliminary CMOS SRAM
GENERAL DESCRIPTION
The KM616FS1000Z and KM616FR1000Z family are fabricated by SAMSUNGs advanced Full CMOS process technology. The family support various operating temperature ranges and has very small size with 0.75 ball pitch and 6 x 8 ball array. The family also support low data retention voltage for battery back-up operation with low data retention current.
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Process Technology : 0.4µm Full CMOS Organization :64Kx16 Power Supply Voltage KM616FS1000Z Family : 2.3V(Min) ~ 3.3V(Max) KM616FR1000Z Family : 1.8V(Min) ~ 2.7V(Max) Low Data Retention Voltage : 1.5V(Min) Three state output status and TTL Compatible Package Type : 48-CSP with 0.75mm ball pitch
PRODUCT FAMILY
Product Family KM616FS1000Z KM616FR1000Z KM616FS1000ZI KM616FR1000ZI Industrial (-40~85°C) Operating Temp.Range Vcc Range (min~max) 2.3~3.3V 1.8~2.7V 2.3~3.3V 1.8~2.7V Power Dissipation Speed(ns) 100*@VCC=3.0±0.3V 150*@VCC=2.5±0.2V 300*@VCC=2.0±0.2V 100*@VCC=3.0±0.3V 150*@VCC=2.5±0.2V 300*@VCC=2.0±0.2V Standby (ISB1) 5µA (Max) 5µA (Max) Operating (ICC2) 80mA(Max) 50mA(Max) 25mA(Max) 80mA(Max) 50mA(Max) 25mA(Max) PKG Type
Commercial (0~70°C)
48-CSP (6x8 ball area with 0.75mm ball pitch)
* The parameter is measured with 30pF test load.
48-CSP PIN TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
D.Path Buffer Add Buffer I/O1~8 Decoder
1 A B C D E F G H LB I/O9 I/O10 VSS VCC I/O15 I/O16 NC
2 OE UB I/O11 I/O12 I/O13 I/O14 NC A8
3 A0 A3 A5 NC NC A14 A12 A9
4 A1 A4 A6 A7 NC A15 A13 A10
5 A2 CS I/O2 I/O4 I/O5 I/O6 WE A11
6 NC I/O1 I/O3 VCC VSS I/O7 I/O8 NC
A0~A15
Memory Array
I/O9~16
CS WE OE Ctrl
LB UB
Name A0~A15 WE CS OE
Function Address Inputs Write Enable Input Chip Select Input
Output Enable Input
Name LB UB Vcc Vss N.C.
Function Lower Byte(I/O1 ~ 8) Upper Byte(I/O9 ~ 16) Power Ground No Connection
* See last page for package dimension.
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 0.1 April 1997
KM616FS1000Z, KM616FR1000Z Family
PRODUCT LIST & ORDERING INFORMATION
PRODUCT LIST
Commercial Temp Product (0~70°C) Part Name KM616FS1000Z-15 KM616FR1000Z-30 Function 48-CSP, 2.5V/3.0V, 150/100ns 48-CSP, 1.8V/2.5V, 300ns Part Name KM616FS1000Z-15 KM616FR1000Z-30
Preliminary CMOS SRAM
Industrial Temp Product (-40~85°C) Function 48-CSP, 2.5V/3.0V, 150/100ns 48-CSP, 1.8V/2.5V, 300ns
* The meaning of 2.5V/3.0V, 150/100ns is that the operating V CC is ranged from 2.3V(Min) to 3.3V(Max) with speed 150ns @2.5V ±0.2 and 100ns @3.0V±0.3. This type of meaning is applied to other notations like the example. ** In case of KM616FR1000Z-30, there is only one speed bin, 300ns though it supports wide range operating V CC.
ORDERING INFORMATION
KM6 16 X X 1000 X X X - X X Blank: : Low Low Power Access Time : 7=70ns, 8=85ns, 10=100ns, 12=120ns, 15=150ns, 30=300ns Operating Temperature : Blank=Commercial, E=Extended, I=Industrial Package Type : G=SOP, T=TSOP Forward R=TSOP Reverse Z=48-CSP with 0.75mm pitch Die Version : Blank=1st generation Density : 1000=1Mbit S=2.3~3.3V, R=1.8~2.7V Process Technology : F-Full CMOS(6-Tr Cell) Organization : 16= x16 SEC Standard SRAM
Revision 0.1 April 1997
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