|
Details, datasheet, quote on part number:KM616V1000BLTI-8L
| |
| Part: | KM616V1000BLTI-8L |
| Category: | Memory => SRAM => Low Power => 1 Mb |
| Description: | Description = KM616V1000B 64K X16 Bit Low Power And Low Voltage CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 3.0~3.6 ;; Speed-tAA(ns) = 70,85 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby Current(uA) = 15,20 ;; Package = 44TSOP2 ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616V1000BLTI-8L datasheet File size : 159 kB |
| Request For quote: | Find where to buy KM616V1000BLTI-8L
|
| |
Datasheet text preview:
KM616V1000B, KM616U1000B Family
Document Title
64K x16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. 0.0 0.1 1.0 History Design target Initial draft Draft Data July 24, 1995 August 12, 1995 Remark Advance Preliminary Final
Finalize April 13, 1996 - One datasheet for commercial and industrial part and 3.0, 3.3V product. Revised - Change datasheet format. - Remove Icc write current value. - Remove low power product from TSOP package - Remove 100ns part from KM616V1000B Family - Remove Extended product Errata correction February 25, 1998
2.0
Final
2.01
August 13, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0 February 1998
KM616V1000B, KM616U1000B Family
64K x16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
· Process Technology : Poly Load · Organization : 64K x16 · Data Byte Control : LB=I/O1~8, UB=I/O9~16 · Power Supply Voltage : KM616V1000B family : 3.0~3.6V KM616U1000B family : 2.7~3.3V · Low Data Retention Voltage : 2V(Min) · Three state output and TTL Compatible · Package Type :44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V1000B and KM616U1000B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby
(ISB1, Max)
Operating (Icc2, Max)
PKG Type
KM616V1000BL-L KM616U1000BL-L KM616V1000BLI-L KM616U1000BLI-L
Commercial(0~70°C) I n d u s t r i a l ( - 4 0 ~ 8 5 ° C)
3.0~3.6V 2.7~3.3V 3.0~3.6V 2.7~3.3V
7 0 1) 100 8 5 1) 100
15µA 15µA 20µA 20µA
65mA
44-TSOP2 Forward/Reverse
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 A11 N.C A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 A11 N.C 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 N.C
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A0 A1 A2 A3 A4 A5 A6 A7 A8 A15 I/O1~ I / O 8
Precharge circuit.
Vcc Vss Memory array 1024 rows 64×16 columns
Row select
44-TSOP2 Forward
44-TSOP2 Reverse
Data cont Data cont Data cont
I/O Circuit Column select
I/O9~I/O16
Name CS OE WE LB UB
Function Chip Select Input Output Enable Input Write Enable Input Lower Byte (I/O1~8) Upper Byte(I/O9~16)
Name Vcc Vss
Function Power Ground
WE OE UB LB CS
A9 A10 A11 A12 A13 A14
I/O1~16 Data Inputs/Outputs A0~A15 Address Inputs N.C No Connection
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 2.0 February 1998
KM616V1000B, KM616U1000B Family
PRODUCT LIST
Commercial Temperature Products(0~70°C) Part Name
KM616V1000BLT-7L KM616U1000BLT-10L KM616V1000BLR-7L KM616U1000BLR-10L
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Function
44-TSOP-2F, 3.3V, 70ns, LL 44-TSOP-2F, 3.0V, 100ns, LL 44-TSOP-2R, 3.3V, 70ns, LL 44-TSOP-2R, 3.0V, 100ns, LL
Part Name
KM616V1000BLTI-8L KM616U1000BLTI-10L KM616V1000BLRI-8L KM616U1000BLRI-10L
Function
44-TSOP-2F, 3.3V, 85ns, LL 44-TSOP-2F, 3.0V, 100ns, LL 44-TSOP-2R, 3.3V, 85ns, LL 44-TSOP-2R, 3.0V, 100ns, LL
FUNCTIONAL DESCRIPTION
CS H L L L L L L L L OE X
1)
WE X
1)
LB X
1)
UB X
1)
I/O1~8 High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9~16 High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Active Active Active Active Active Active Active Active
H X
1)
H X
1)
X1) H L H L L H L
X1) H H L L H L L
L L L X X
1) 1)
H H H L L L
X1)
1. X means dont care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Symbol VIN,VOUT VCC PD T STG Ratings -0.5 to Vcc+0.5 -0.5 to 4.6 1.0 -65 to 150 0 to 70 Operating Temperature TA -40 to 85 Soldering temperature and time T SOLDER 260°C, 10sec (Lead Only) °C Unit V V W °C °C Remark KM616V1000BL-L KM616U1000BL-L KM616V1000BLI-L KM616U1000BLI-L -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.0 February 1998
|
|
