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Details, datasheet, quote on part number:KM616V1002B-10
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| Part: | KM616V1002B-10 |
| Category: | Memory => SRAM => Async. SRAM => 1 Mb => Fast SRAM |
| Description: | Description = KM616V1002B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C,i ;; Operating Current(mA) = 200 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2 ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM616V1002B-10 datasheet File size : 211 kB |
| Request For quote: | Find where to buy KM616V1002B-10
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Datasheet text preview:
PRELIMINARY
KM616V1002B/BL, KM616V1002BI/BLI
Document Title
64Kx16 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
Pr LIMIN a RY PREeliminAry CMOS SRAM
Revision History
Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Add Capacitive load of the test environment in A.C test load. 2.3. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 200/190/180mA 200/195/190mA ISB 30mA 50mA Change Standby and Data Retention Current for L-ver. Items Previous spec. Changed spec. ISB 0.5mA 0.7mA IDR at 3.0V 0.4mA 0.5mA IDR at 2.0V 0.3mA 0.4mA Draft Data Apr. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary
Rev. 2.0
Feb. 25th, 1998
Final
Rev. 2.1
Aug. 4th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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Rev 2.1 August 1998
PRELIMINARY
KM616V1002B/BL, KM616V1002BI/BLI
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
· Fast Access Time 8,10,12ns(Max.) · Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS): 5mA(Max.) 0.7mA(Max.) L-Ver. only Operating KM616V1002B/BL - 8 : 200mA(Max.) KM616V1002B/BL - 10: 195mA(Max.) KM616V1002B/BL - 12: 190mA(Max.) · Single 3.3±0.3V Power Supply · TTL Compatible Inputs and Outputs · Fully Static Operation - No Clock or Refresh required · Three State Outputs · 2V Minimum Data Retention; L-Ver. only · Center Power/Ground Pin Configuration · Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16 · Standard Pin Configuration KM616V1002BJ: 44-SOJ-400 KM616V1002BT: 44-TSOP2-400F
Pr LIMIN a RY PREeliminAry CMOS SRAM
GENERAL DESCRIPTION
The KM616V1002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM616V1002B uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM616V1002B is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward.
PIN CONFIGURATION (Top View)
A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 1 2 3 4 5 6 7 8 9 44 A15 43 A14 42 A13 41 OE 40 UB 39 LB 38 I/O16 37 I/O15 36 I/O14
ORDERING INFORMATION
KM616V1002B/BL -8/10/12 KM616V1002BI/BLI -8/10/12 Commercial Temp. Industrial Temp.
I/O4 10 Vcc 11 Vss 12
SOJ/ TSOP2
35 I/O13 34 Vss 33 Vcc 32 I/O12 31 I/O11 30 I/O10 29 I/O9 28 N.C 27 A12 26 A11 25 A10 24 A9 23 N.C
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0 A1
I/O5 13 I/O6 14 I/O7 15 I/O8 16 WE 17 A5 18
Pre-Charge Circuit
Row Select
A2 A3 A4 A5 A6 A7 I/O1 ~I/O8 I/O9 ~I/O1 6
A6 19
Memory Array 256 Rows 256x16 Columns
A7 20 A8 21 N.C 22
Data Cont. Data Cont. Gen. CLK
I/O Circuit & Column Select
PIN FUNCTION
Pin Name A0 - A15 WE CS Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O1~I/O8) Upper-byte Control(I/O9~I/O16) Data Inputs/Outputs Power(+3.3V) Ground No Connection
A8 A9 A10 A11 A1 2 A13 A14 A15
OE LB UB
WE OE UB LB CS
I/O 1 ~ I/O16 VCC VSS N.C
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Rev 2.1 August 1998
PRELIMINARY
KM616V1002B/BL, KM616V1002BI/BLI
ABSOLUTE MAXIMUM RATINGS*
Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 4.6 -0.5 to 4.6 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V W °C °C °C
Pr LIMIN a RY PREeliminAry CMOS SRAM
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC V SS VIH VIL Min 3.0 0 2.0 -0.3** Typ 3.3 0 Max 3.6 0 VCC+0.3*** 0.8 Unit V V V V
* The above parameters are also guaranteed at industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width 6ns) for I 20mA. *** VIH(Max) = VCC + 2.0V a.c (Pulse Width 6ns) for I 20mA.
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC VIN=VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH f=0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA Normal L-Ver. 8ns 10ns 12ns Standby Current ISB ISB1 Test Conditions Min -2 -2 2.4 Max 2 2 200 195 190 50 5 0.7 0.4 V V mA mA Unit µA µA mA
Output Low Voltage Level Output High Voltage Level
VOL VOH
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item Input/Output Capacitance Input Capacitance * Capacitance is sampled and not 100% tested. Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN Max 8 6 Unit pF pF
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Rev 2.1 August 1998
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