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Details, datasheet, quote on part number:KM68FV8100FI
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| Part: | KM68FV8100FI |
| Category: | Memory => SRAM => Low Power => 8 Mb |
| Description: | Description = KM68FV8100 1M X 8 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 1Mx8 ;; Vcc(V) = 3.0~3.6 ;; Speed-tAA(ns) = 55,70 ;; Operating Temperature = C,i ;; Operating Current(mA) = 4 ;; Standby Current(uA) = 0.5 ;; Package = 44TSOP2,48FBGA ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM68FV8100FI datasheet File size : 205 kB |
| Request For quote: | Find where to buy KM68FV8100FI
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Datasheet text preview:
Preliminary
KM68FV8100 Family
Document Title
1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
August 25, 1999
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 0.0 August 1999
Preliminary
KM68FV8100 Family
FEATURES
· Process Technology: Full CMOS · Organization: 1M x8 · Power Supply Voltage: 3.0~3.6V · Low Data Retention Voltage: 1.5V(Min) · Three state output and TTL Compatible · Package Type: 44-TSOP2-400F/R, 48-FBGA-8.00x12.00
CMOS SRAM
GENERAL DESCRIPTION
The KM68FV8100 families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
PRO DUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5µ A Operating (ICC1, Max) 3mA PKG Type 44-TSOP2-400F/R 48-FBGA-8.00x12.00
KM68FV8100I
Industrial(-40~85°C)
3.0~3.6V
5 5 1 ) /70ns
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A
DNU
OE
A0
A1
A2
CS2 Vcc Vss
B
DNU
DNU
A3
A4
CS1
DNU Row Addresses Row select Memory array 2048 rows 256 ×8 columns
C
I/O1
DNU
A5
A6
DNU
I/O5
D
Vss
I/O2
A17
A7
I/O6
Vcc
E
Vcc
I/O3
VC C
A16
I/O7
Vss
I/O 1~I/O8
Data cont
I/O Circuit Column select
F
I/O4
DNU
A14
A15
DNU
I/O8 Data cont
G
DNU
DNU
A12
A13
WE
DNU Column Addresses
H
A18
A8
A9
A10
A11
A19
CS1 CS2
48-FBGA: Top View (Ball Down)
A4 A3 A2 A1 A0 CS1 DNU DNU I/O1 I/O2 Vcc Vss I/O3 I/O4 DNU DNU WE A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE CS2 A8 DNU DNU I/O8 I/O7 Vss Vcc I/O6 I/O5 DNU DNU A9 A10 A11 A12 A13 A14 A5 A6 A7 OE CS2 A8 DNU DNU I/O8 I/O7 Vss Vcc I/O6 I/O5 DNU DNU A9 A10 A11 A12 A13 A14 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A4 A3 A2 A1 A0 CS1 DNU DNU I/O1 I/O2 Vcc Vss I/O3 I/O4 DNU DNU WE A19 A18 A17 A16 A15
OE WE
Control Logic
44-TSOP2 Forward
44-TSOP2 Reverse
Name CS1, CS2 OE WE
Function Chip Select Inputs Output Enable Input Write Enable Input
Name
Function
A0~A19 Address Inputs Vcc Vss DNU Power Ground Do Not Use
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 0.0 August 1999
Preliminary
KM68FV8100 Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name KM68FV8100TI-5 KM68FV8100TI-7 KM68FV8100RI-5 KM68FV8100RI-7 KM68FV8100FI-5 KM68FV8100FI-7 Function
CMOS SRAM
44-TSOP2-F, 55ns, 3.3V 44-TSOP2-F, 70ns, 3.3V 44-TSOP2-R, 55ns, 3.3V 44-TSOP2-R, 70ns, 3.3V 48-FBGA, 55ns, 3.3V 48-FBGA, 70ns, 3.3V
FUNCTIONAL DESCRIPTION
CS1 H X1) L L L CS2 X
1)
OE X
1)
WE X
1)
I/O 1~8 High-Z High-Z High-Z Dout Din
Mode Deselected Deselected Output Disabled Read Write
Power Standby Standby Active Active Active
L H H H
X 1) H L X 1)
X1) H H L
1. X means dont care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.2 to 3.9 -0.2 to 4.6 1.0 -55 to 150 -40 to 85 Unit V V W °C °C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 0.0 August 1999
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