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Details, datasheet, quote on part number:KM68S1000ELTI-10L
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| Part: | KM68S1000ELTI-10L |
| Category: | Memory => SRAM => Low Power => 1 Mb |
| Description: | Description = KM68S1000E 128K X 8 Bit Low Power And Low Voltage CMOS Static RAM ;; Organization = 128Kx8 ;; Vcc(V) = 2.3~2.7 ;; Speed-tAA(ns) = 85,100 ;; Operating Temperature = i ;; Operating Current(mA) = 15 ;; Standby Current(uA) = 10 ;; Package = 32TSOP1-0820,32TSOP1-0813.4F ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM68S1000ELTI-10L datasheet File size : 147 kB |
| Request For quote: | Find where to buy KM68S1000ELTI-10L
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Datasheet text preview:
KM68S1000E Family
Document Title
128Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalize
Draft Data
September 10, 1998 April 12, 1999
Remark
Preliminary Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 April 1999
KM68S1000E Family
128Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
· Process Technology: TFT · Organization: 128Kx8 · Power Supply Voltage: 2.3V ~ 2.7V · Low Data Retention Voltage: 2V(Min) · Three state output and TTL Compatible · Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F
CMOS SRAM
GENERAL DESCRIPTION
The KM68S1000E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support industrial operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed(ns) Standby (ISB1, Max) 10µA Operating (ICC2, Max) 15mA PKG Type 32-TSOP1-0820F 32-TSOP1-0813.4F
KM68S1000ELI-L
Industrial(-40~85°C)
2.3~2.7V
851)/100
1. The parameters are tested with 30pF test load
PIN DESCRIPTION
A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
32-TSOP 3 2 - S TSOP Type1-Forward
Row select
Memory array 1024 rows 128 ×8 columns
Name A0~A16 WE CS1, C S 2 OE I/O1~I/O8 Vcc Vss N.C.
Function Address Inputs
I/O1
Write Enable Input Chip Select Input Output Enable Input Data Inputs/Outputs Power Ground No Connection
CS1 CS2 WE OE
I/O8
Data cont
I/O Circuit Column select
Data cont
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.0 April 1999
KM68S1000E Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name Function
CMOS SRAM
KM68S1000ELTI-8L KM68S1000ELTI-10L KM68S1000ELTGI-8L KM68S1000ELTGI-10L
32-TSOP F, 85ns, 2.5V 32-TSOP F, 100ns, 2.5V 32-sTSOP F, 85ns, 2.5V 32-sTSOP F, 100ns, 2.5V
FUNCTIONAL DESCRIPTION
CS1 H X1) L L L CS2 X 1) L H H H OE X1) X1) H L X1) WE X1) X1) H H L I/O High-Z High-Z High-Z Dout Din Mode Deselected Deselected Output Disabled Read Write Power Standby Standby Active Active Active
1. X means dont care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.5 to VCC+0.5 -0.3 to 4.0 1.0 -65 to 150 -40 to 85 Unit V V W °C °C Remark KM68S1000ELI
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 1.0 April 1999
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