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Part: KM68V4000BLG-10L
Category:
Memory
-> SRAM
-> Low Power
-> 4 Mb
Description: Description = KM68V4000BLG 512K X 8 Bit Low Power And Low Voltage CMOS Static RAM ;; Organization = 512Kx8 ;; Vcc(V) = 3.0~3.6 ;; Speed-tAA(ns) = 70,85 ;; Operating Temperature = C,i ;; Operating Current(mA) = 45 ;; Standby Current(uA) = 20 ;; Package = 32SOP,32TSOP2 ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download KM68V4000BLG-10L datasheet File size : 32 kB
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Datasheet text preview:
KM68V4000B, KM68U4000B Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 1.0 Initial draft Finalize - Change datasheet format - Erase low power part from product - Erase 70ns part from KM68U4000B family - Power dissipation Improved 0.7 to 1.0W - VIL(MAX) improved 0.4 to 0.6V. - ICC2 decreased 50 to 45mA. Revised - ICC1 decreased 20 to 25mA
Draft Data
December 17, 1996 Januarary 14, 1998
Remark
Preliminary Final
2.0
February 12, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0 February 1998
KM68V4000B, KM68U4000B Family
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
· Process Technology : TFT · Organization : 512K×8 · Power Supply Voltage KM68V4000B Family : 3.0~3.6V KM68U4000B Family : 2.7~3.3V · Low Data Retention Voltage : 2V(Min) · Three state output and TTL Compatible · Package Type : 32-SOP, 32-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM68V4000B and KM68U4000B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family KM68V4000BL-L KM68V4000BLI-L KM68U4000BL-L KM68U4000BLI-L Operating Temperature C o m m e r c i a l ( 0 ~ 7 0 ° C) I n d u s t r i a l ( - 4 0 ~ 8 5 ° C) C o m m e r c i a l ( 0 ~ 7 0 ° C) I n d u s t r i a l ( - 4 0 ~ 8 5 ° C) Vcc Range 3.0~3.6V 3.0~3.6V 2.7~3.3V 2.7~3.3V Speed(ns) 701)/851)/100 85
1)/100
Standby (ISB1, Max) 15µA 20µA 15µA 20µA
Operating (ICC2)
PKG Type
45mA
851)/100 851)/100
32-SOP 32-TSOP2-F/R
1. The paramerter is measured with 30pF test load.
PIN DESCRIPTION
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A18 A16 A14 A12 A7 A6 A5 A4 A1 A0
32-SOP 32-TSOP2 Forward
25 24 23 22 21 20 19 18 17
32-TSOP2 Reverse
7 8 9 10 11 12 13 14 15 16
Row select
Memory array 1024 rows 512×8 columns
I/O1 I/O1 I/O2 I/O3 VSS I/O8
Data cont
I/O Circuit Column select
Data cont
Name CS OE WE
Function Chip Select Input Output Enable Input Write Enable Input
Name
Function
A9 A8 A13 A17 A15 A10 A11 A3 A2
I/O1~I/O8 Data Inputs/Outputs Vcc Vss Power Ground
CS WE OE
Control logic
A0~A18 Address Inputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 2.0 February 1998
KM68V4000B, KM68U4000B Family
PRODUCT LIST
Commercial Temp Products(0~70°C) Part Name KM68V4000BLG-7L KM68V4000BLG-8L KM68V4000BLG-10L KM68V4000BLT-7L KM68V4000BLT-8L KM68V4000BLT-10L KM68V4000BLR-7L KM68V4000BLR-8L KM68V4000BLR-10L KM68U4000BLG-8L KM68U4000BLG-10L KM68U4000BLT-8L KM68U4000BLT-10L KM68U4000BLR-8L KM68U4000BLR-10L Function 32-SOP, 70ns, 3.3V,LL 32-SOP, 85ns, 3.3V,LL 32-SOP, 100ns, 3.3V,LL 32-TSOP2-F, 70ns, 3.3V,LL 32-TSOP2-F, 85ns, 3.3V,LL 32-TSOP2-F, 100ns, 3.3V,LL 32-TSOP2-R, 70ns, 3.3V,LL 32-TSOP2-R, 85ns, 3.3V,LL 32-TSOP2-R, 100ns, 3.3V,LL 32-SOP, 85ns, 3.0V,LL 32-SOP, 100ns, 3.0V,LL 32-TSOP2-F, 85ns, 3.0V,LL 32-TSOP2-F, 100ns, 3.0V,LL 32-TSOP2-R, 85ns, 3.0V,LL 32-TSOP2-R, 100ns, 3.0V,LL
CMOS SRAM
Industrial Temp Products(-40~85°C) Part Name Function 32-SOP, 85ns, 3.3V,LL 32-SOP, 100ns, 3.3V,LL 32-TSOP2-F, 85ns, 3.3V,LL 32-TSOP2-F, 100ns, 3.3V,LL 32-TSOP2-R, 85ns, 3.3V,LL 32-TSOP2-R, 100ns, 3.3V,LL 32-SOP, 85ns, 3.0V,LL 32-SOP, 100ns, 3.0V,LL 32-TSOP2-F, 85ns, 3.0V,LL 32-TSOP2-F, 100ns, 3.0V,LL 32-TSOP2-R, 85ns, 3.0V,LL 32-TSOP2-R, 100ns, 3.0V,LL
KM68V4000BLGI-8L KM68V4000BLGI-10L KM68V4000BLTI-8L KM68V4000BLTI-10L KM68V4000BLRI-8L KM68V4000BLRI-10L KM68U4000BLGI-8L KM68U4000BLGI-10L KM68U4000BLTI-8L KM68U4000BLTI-10L KM68U4000BLRI-8L KM68U4000BLRI-10L
Note : LL means Low Low standby current
FUNCTIONAL DESCRIPTION
CS H L L L OE X1) H L X1) WE X 1) H H L I/O High-Z High-Z Dout Din Mode Deselected Output Disabled Read Write Power Standby Active Active Active
1. X means dont care (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Soldering temperature and time Symbol VIN,VOUT VCC PD T STG TA -40 to 85 TSOLDER 260°C, 10sec (Lead Only) Ratings -0.5 to VCC+0.5 -0.3 to 4.6 1 -65 to 150 0 to 70 Unit V V W °C °C °C Remark KM68V4000BL, KM68U4000BL KM68V4000BLI, KM68U4000BLI -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.0 February 1998
Others parts begin by km
KM-1 KM-2 KM-3 KM-4 KM-5 KM-6 KM-7 KM-8 KM-9 KM-10 KM-11 KM-12 KM-13 KM-14 KM-15 KM-16 KM-17 KM-18 KM-19 KM-20 KM-21 KM-22
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