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Part: KM68V4002C
Category:
Memory
-> SRAM
-> Async. SRAM
-> 4 Mb
-> -> Fast SRAM
Description: Description = KM64V4002C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ;; Organization = 512Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i,l,p ;; Operating Current(mA) = 155,145,135 ;; Standby Current(mA) = 10 ;; Package = 36SOJ,44TSOP2 ;; Production Status = Eol ;; Comments = ,
Company: Samsung Semiconductor, Inc.
Datasheet: Download KM68V4002C datasheet File size : 32 kB
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Datasheet text preview:
PRELIMINARY KM68V4002C/CL, KM68V4002CI/CLI
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
RevNo. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 195mA 190mA 185mA Final Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
Rev. 3.0
3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. ICC 195mA 190mA 185mA Previous Isb 70mA Isb1 20mA ICC 155mA 145mA 135mA 125mA Current I sb 60mA Isb1 10mA
Mar. 27. 2000
10ns 12ns 15ns 20ns Rev. 4.0
Add Low Power-Ver.
Apr. 24. 2000
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0 April 2000
PRELIMINARY KM68V4002C/CL, KM68V4002CI/CLI
512K x 8 Bit High-Speed CMOS Static RAM
FEATURES
· Fast Access Time 10,12,15,20ns(Max.) · Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating KM68V4002C/CL-10 : 155mA(Max.) KM68V4002C/CL-12 : 145mA(Max.) KM68V4002C/CL-15 : 135mA(Max.) KM68V4002C/CL-20 : 125mA(Max.) · Single 3.3±0.3V Power Supply · TTL Compatible Inputs and Outputs · Fully Static Operation - No Clock or Refresh required · Three State Outputs · 2V Minimum Data Retention ; L-Ver. only · Center Power/Ground Pin Configuration · Standard Pin Configuration KM68V4002CJ : 36-SOJ-400 KM68V4002CT : 44-TSOP2-400BF
CMOS SRAM
GENERAL DESCRIPTION
The KM68V4002C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM68V4002C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V4002C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O8
ORDERING INFORMATION
KM68V4002C/CL-10/12/15/20 Commercial Temp. Industrial Temp. KM68V4002CI/CLI-10/12/15/20
Pre-Charge Circuit
Row Select
Memory Array 1024 Rows 512 x 8 Columns
Data Cont. CLK Gen.
I/O Circuit Column Select
A10 A11 A12 A13 A14 A15 A16 A17 A18
CS WE OE
-2-
Rev 4.0 April 2000
PRELIMINARY KM68V4002C/CL, KM68V4002CI/CLI
PIN CONFIGURATION (Top View)
A0 A1 A2 A3 A4 CS I/O1 I/O2 Vcc Vss 1 2 3 4 5 6 7 8 9 10 36 N . C 35 A 18 34 A 17 33 A 16 32 A 15 31 OE N.C N.C A0 A1 A2 A3 A4 CS I/O1 1 2 3 4 5 6 7 8 9 4 4 N.C 4 3 N.C 4 2 N.C 41 40 39 38 37 A 18 A 17 A 16 A 15 OE
CMOS SRAM
30 I/O8 29 I/O7
36 I/O8 35 I/O7
36-SOJ
I/O2 10 Vcc 1 1 Vss 1 2 I/O3 13 I/O4 14 WE A5 A6 A7 A8 A9 15 16 17 18 19 20
2 8 Vss 2 7 Vcc 26 I/O6 25 I/O5 24 A 14 23 A 13 22 A 12 21 A 11 20 A 10 19 N . C
44-TSOP2
3 4 Vss 3 3 Vcc 32 I/O6 31 I/O5 30 29 28 27 26 A 14 A 13 A 12 A 11 A 10
I/O3 11 I/O4 12 WE A5 A6 A7 A8 A9 13 14 15 16 17 18
2 5 N.C 2 4 N.C 2 3 N.C
N.C 2 1 N.C 2 2
PIN FUNCTION
Pin Name A0 - A18 WE CS OE I/O1 ~ I/O8 VCC V SS N.C Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3V) Ground No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 4.6 -0.5 to 4.6 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V W °C °C °C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-3-
Rev 4.0 April 2000
Others parts begin by km
KM-1 KM-2 KM-3 KM-4 KM-5 KM-6 KM-7 KM-8 KM-9 KM-10 KM-11 KM-12 KM-13 KM-14 KM-15 KM-16 KM-17 KM-18 KM-19 KM-20 KM-21 KM-22
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