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Details, datasheet, quote on part number:KM736V599AT
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| Part: | KM736V599AT |
| Category: | Memory => SRAM => Sync. SRAM => 1 Mb => SB & SPB |
| Description: | Description = KM736V599AT 32Kx36-Bit Synchronous Pipelined Burst SRAM ;; Organization = 32Kx36 ;; Operating Mode = SPB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 4.5,5.0,5.0 ;; Speed-tcyc (MHz) = 133,117,100 ;; I/o Voltage(V) = 3.3 ;; Package = 100TQFP ;; Production Status = Eol ;; Comments = - |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KM736V599AT datasheet File size : 439 kB |
| Request For quote: | Find where to buy KM736V599AT
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Datasheet text preview:
PRELIMINARY
KM736V599A/L
Document Title
32Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP
32Kx36 Synchronous SRAM
Revision History
Rev . No.
Rev.0.0 Rev.1.0
History
Initial draft Final spec release
Draft Date
Feb. 18. 1997 May.13. 1997
Remark
Preliminary Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1997 Rev 1.0
PRELIMINARY
KM736V599A/L
FEATURES
· · · · · · · · · · · · · · · · Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. ADD=3.3V-5%/+10% Power Supply 5V Tolerant Inputs except I/O Pins Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin allows a choice of either a interleaved burst or a linear burst. Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable. Asynchronous Output Enable Control. ADSP, ADSC, ADV Burst Control Pins. TTL-Level Three-State Output. 100-TQFP-1420A
32Kx36 Synchronous SRAM
GENERAL DESCRIPTION
The KM736V599A/L is a 1,179,648-bit Synchronous Static Random Access Memory designed for high performance second level cache of P6 and Power PC based System. It is organized as 32K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address status processor(ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the systems burst sequence and are controlled by the burst address advance(ADV) input. LBO pin is DC operated and determines burst sequence(linear or interleaved). ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK. The KM736V599A/L is fabricated using SAMSUNGs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.
32Kx36-Bit Synchronous Pipelined Burst SRAM
FAST ACCESS TIMES
Parameter Cycle Time Clock Access Time Output Enable Access Time Symbol tCYC tCD tOE -7 7.5 4.5 4.5 -8 8.6 5.0 5.0 - 1 0 Unit 10 5.0 5.0 ns ns ns
LOGIC BLOCK DIAGRAM
CLK LBO CONTROL REGISTER ADV ADSC BURST CONTROL LOGIC BURST ADDRESS COUNTER A0~A1
32Kx36 MEMORY ARRAY
A0~A1 ADDRESS REGISTER A2~A14
ADSP
A0~A14
CS1 CS2 CS2 GW BW WEa WEb WE c WEd OE
ZZ
DATA-IN REGISTER CONTROL REGISTER
CONTROL LOGIC
OUTPUT REGISTER BUFFER
DQa0 ~ DQd7 DQPa ~ DQPd
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May 1997 Rev 1.0
PRELIMINARY
KM736V599A/L
PIN CONFIGURATION(TOP VIEW)
ADSC ADSP WE d WE b WE a WE c A DV 83 CL K CS 1 CS 2 CS 2 VDD GW VSS BW OE A6 A7 A8 82 A9 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
32Kx36 Synchronous SRAM
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N. C.
N. C.
VSS
N. C.
N. C.
N. C.
PIN NAME
SYMBOL A0 - A14 PIN NAME Address Inputs TQFP PIN NO. 32,33,34,35,36,37, 44,45,46,47,48, 81,82,99,100 83 84 85 89 98 97 92 93,94,95,96 86 88 87 64 31 SYMBOL VDD VSS N.C. DQa0~a7 DQb0~b7 D Q c 0~c7 DQd0~d7 DQPa~Pd VDDQ VSSQ PIN NAME Power Supply(+3.3V) Ground No Connect Data Inputs/Outputs TQFP PIN NO. 15,41,65,91 17,40,67,90 14,16,38,39,42,43,49,50 ,66 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76
ADV ADSP ADSC CLK CS1 CS2 CS2 WEx OE GW BW ZZ LBO
Burst Address Advance Address Status Processor Address Status Controller Clock Chip Select Chip Select Chip Select Byte Write Inputs Output Enable Global Write Enable Byte Write Enable Power Down Input Burst Mode Control
Output Power Supply Output Ground
N. C.
VDD
A5
A4
A3
A2
A1
A0
A10
A11
A12
A13
LBO
A14
50
DQPc DQc0 DQc1 VDDQ V SSQ DQc2 DQc3 DQc4 DQc5 V SSQ VDDQ DQc6 DQc7 N.C. VDD N.C. VSS DQd0 DQd1 VDDQ V SSQ DQd2 DQd3 DQd4 DQd5 V SSQ VDDQ DQd6 DQd7 DQPd
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
100 Pin TQFP
(20mm x 14mm)
DQPb DQb7 DQb6 VDDQ VSSQ DQb5 DQb4 DQb3 DQb2 VSSQ VDDQ DQb1 DQb0 VSS N.C. VDD ZZ DQa7 DQa6 VDDQ VSSQ DQa5 DQa4 DQa3 DQa2 VSSQ VDDQ DQa1 DQa0 DQPa
-3-
May 1997 Rev 1.0
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