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Part: KMM332F400CS
Category:
Memory
-> DRAM
-> Async DRAM
-> Modules
-> Buffered DIMM
Description: Description = KMM332F400CS 4Mx32 DRAM Sodimm Using 4MX4,4K&2K Ref.,3.3V,Low Power/self-refresh ;; Density(MB) = - ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x8 ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download KMM332F400CS datasheet File size : 42 kB
Request For quote: Find where to buy KMM332F400CS
Datasheet text preview:
DRAM MODULE
KMM332F400CS-L KMM332F410CS-L
KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh
GENERAL DESCRIPTION
The Samsung KMM332F40(1)0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM332F40(1)0CS consists of eight CMOS 4Mx4bits DRAMs in 24-pinTSOPII packages mounted on a 72-pin six layer zigzag glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM332F40(1)0CS is a Small Out-line Dual In-line Memory Module with edge connections and is intended for mounting into 72-pin dual readout zigzag edge connector sockets.
FEATURES
· Part Identification - KMM332F400CS-L5/L6 (4096 cycles/128ms Ref, TSOP, Low Power, 50/60ns) - KMM332F410CS-L5/L6 (2048 cycles/128ms Ref, TSOP, Low Power, 50/60ns) · Fast Page with EDO Mode Operation · CAS-before-RAS Refresh capability · RAS-only and Hidden refresh capability · Self refresh capability · LVTTL compatible inputs and outputs · Single +3.3V±0.3V power supply · JEDEC standard PDPin & pinout (72pin) · PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed -L5 -L6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
90ns 110ns
tHPC
25ns 30ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VCC PD1 A0 A1 A2 A3 A4 A5 A6 A10 NC DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 A7 A11 VCC A8 A9 NC RAS2 DQ16 NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol DQ18 DQ19 VSS CAS0 CAS2 CAS3 CAS1 RAS0 NC NC W NC DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 NC DQ27 DQ28 DQ29 DQ31 DQ30 VCC DQ32 DQ33 DQ34 NC PD2 PD3 PD4 PD5 PD6 PD7 VSS
PIN NAMES
Pin Name A0 - A11 A0 - A10 DQ(0 -7,9-16, 18-25,27-34) W RAS0, RAS2 CAS0 - CAS3 PD1 -PD7 VCC VSS NC Function Address Inputs (4K ref) Address Inputs (2K ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+3.3V) Ground No Connection
PRESENCE DETECT PINS (Optional)
Pin PD1 PD2 PD3 PD4 PD5 PD6 PD7 50NS NC NC VSS NC VSS VSS NC 60NS NC NC VSS NC NC NC NC
* Pin Connection Charging Available NOTE : A11 is used for only KMM332F400CS (4K ref.)
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
CAS0 RAS0
U0
KMM332F400CS-L KMM332F410CS-L
CAS RAS OE
A0w A11(A10)
U1
DQ0 DQ1 DQ2 DQ3
DQ0-3
CAS RAS OE
A0w A11(A10)
U2
DQ0 DQ1 DQ2 DQ3
DQ4-7
CAS1
CAS RAS OE
A0w A11(A10)
U3
DQ0 DQ1 DQ2 DQ3
DQ9-12
CAS RAS OE
A0w A11(A10)
U4
DQ0 DQ1 DQ2 DQ3
DQ13-16
CAS2 RAS2
CAS RAS OE
A0w A11(A10)
U5
DQ0 DQ1 DQ2 DQ3
DQ18-21
CAS RAS OE
A0w A11(A10)
U6
DQ0 DQ1 DQ2 DQ3
DQ22-25
CAS3
CAS RAS OE
A0w A11(A10)
U7
DQ0 DQ1 DQ2 DQ3
DQ27-30
CAS RAS OE
A0w A11(A10)
DQ0 DQ1 DQ2 DQ3
DQ31-34
W A0-A11(A10) VCC VSS .1uF or .22uF Capacitor for each DRAM To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg PD IOS
KMM332F400CS-L KMM332F410CS-L
Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +150 8 50 Unit V V °C W mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item Supply Voltage Ground Input High Voltage Input Low Voltage *1 : VCC+1.3V/15ns, Pulse width is measured at VCC. *2 : -1.3V/15ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min 3.0 0 2.0 -0.3*2 Typ 3.3 0 Max 3.6 0 VCC+0.3*1 0.8 Unit V V V V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
KMM332F400CS KMM332F410CS Min Max Min Max ICC1 -L5 720 880 -L6 640 800 ICC2 Dont care 8 8 ICC3 -L5 720 880 -L6 640 800 ICC4 -L5 640 720 -L6 560 640 ICC5 Dont care 1.6 1.6 ICC6 -L5 720 880 -L6 640 800 ICC7 Dont care 2000 2000 ICCS Dont care 1600 1600 II(L) -40 40 -40 40 Dont care IO(L) -5 5 -5 5 VOH 2.4 2.4 Dont care VOL 0.4 0.4 ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : EDO Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V) DQ0-31=Dont care, tRC=31.25us (4K Ref.),62.5us (2K Ref.) , tRAS=tRASmin~300ns Iccs : Self Refresh Current (RAS=CAS-VIL , W=OE=A0-A11=VCC-0.2V or 0.2V, DQ0-DQ31=VCC-0.2V,0.2V or OPEN) II(L) : Input Leakage Current (Any input 0VINVCC+0.3V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0VVOUTVCC) VOH : Output High Voltage Level (IOH = -2mA) VOL : Output Low Voltage Level (IOL = 2mA) Symbol Speed Unit mA mA mA mA mA mA mA mA mA mA uA uA uA uA V V
* NOTE : ICC1 , ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle, tHPC.
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