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Details, datasheet, quote on part number:KMM372C1600BS
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| Part: | KMM372C1600BS |
| Category: | Memory => DRAM => Async DRAM => Modules => Buffered DIMM |
| Description: | Description = KMM372C1600BK 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x18+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KMM372C1600BS datasheet File size : 435 kB |
| Request For quote: | Find where to buy KMM372C1600BS
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Datasheet text preview:
DRAM MODULE
KMM372C160(8)0BK/BS
KMM372C160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM372C160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C160(8)0B consists of eighteen CMOS 16Mx4bits DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM372C160(8)0B is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets.
FEATURES
· Part Identification Part number KMM372C1600BK KMM372C1600BS PKG SOJ TSOP Ref. 4K CBR Ref. ROR Ref.
4K/64ms 8K/64ms
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
18ns 20ns
tRC
90ns 110ns
tPC
35ns 40ns
KMM372C1680BK SOJ 8K 4K/64ms KMM372C1680BS TSOP · Fast Page Mode Operation · CAS-before-RAS Refresh capability · RAS-only and Hidden refresh capability · TTL compatible inputs and outputs · Single 5V±10% power supply · JEDEC standard pinout & Buffered PDpin · Buffered input except RAS and DQ · PCB : Height(1250mil), double sided component
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 RSVD VSS RSVD RSVD VCC W0 CAS0 29 *CAS2 30 RAS0 31 OE0 VSS 32 A0 33 A2 34 A4 35 A6 36 A8 37 A10 38 A12 39 VCC 40 41 RFU 42 RFU 43 VSS 44 OE2 45 RAS2 46 CAS4 47 *CAS6 W2 48 VCC 49 50 RSVD 51 RSVD 52 DQ18 53 DQ19 VSS 54 55 DQ20 56 DQ21 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 DQ22 DQ23 VCC DQ24 RFU RFU RFU RFU DQ25 DQ26 DQ27 VSS DQ28 DQ29 DQ30 DQ31 VCC DQ32 DQ33 DQ34 RSVD VSS PD1 PD3 PD5 PD7 ID0 VCC 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Back VSS DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 DQ44 VSS DQ45 DQ46 DQ47 DQ48 DQ49 VCC DQ50 DQ51 DQ52 RSVD VSS RSVD RSVD VCC RFU *CAS1 Pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Back *CAS3 *RAS1 RFU VSS A1 A3 A5 A7 A9 A11 *A13 VCC RFU B0 VSS RFU *RAS3 *CAS5 *CAS7 PDE VCC RSVD RSVD DQ54 DQ55 VSS DQ56 DQ57 Pin Back 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 DQ58 DQ59 VCC DQ60 RFU RFU RFU RFU DQ61 RSVD DQ63 VSS DQ64 DQ65 DQ66 DQ67 VCC DQ68 DQ69 DQ70 DQ71 VSS PD2 PD4 PD6 PD8 ID1 VCC
PIN NAMES
Pin Names A0, B0, A1 - A11 A0, B0, A1 - A12 DQ0 - DQ71 W0, W2 OE0, OE2 RAS0, RAS2 CAS0, CAS4 VCC VSS NC PDE PD1 - 8 ID0 - 1 RSVD RFU Function Address Input(4K ref.) Address Input(8K ref.) Data In/Out Read/Write Enable Output Enable Row Address Strobe Column Address Strobe Power(+5V) Ground No Connection Presence Detect Enable Presence Detect ID bit Reserved Use Reserved for Future Use
PD & ID Table
Pin PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 ID0
Pins marked * are not used in this module.
50NS 1 1 1 1 0 0 0 0 0
60NS 1 1 1 1 0 1 1 0 0 0
NOTE : A12 is used for only KMM372C1680BK/BS (8K Ref.)
ID1 0 PD Note :PD & ID Terminals must each be pulled up through a resistor to V CC at the next higher level assembly. PDs will be either open (NC) or driven to V SS via on-board buffer circuits. PD : 0 for Vol of Drive IC & 1 for N.C ID Note : IDs will be either open (NC) or connected directly to V SS without a buffer. ID : 0 for Vss & 1 for N.C
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0 CAS0 OE0 W0 A0 A1-A11(A12)
U0
KMM372C160(8)0BK/BS
RAS2 CAS4 OE2 W2 B0 A1-A11(A12) DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ35
U9
DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3
DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQ64 DQ65 DQ66 DQ67 DQ68 DQ69 DQ70 DQ71 U0-U8 U9-U17 U0-U17 U0-U8 U9-U17
U1
U10
U2
U11
U3
U12
U4
U13
U5
U14
U6
U15
U7
U16
U8
U17
NOTE : A12 is used for only KMM372C1680BK/BS(8K Ref.) Vcc Vss 0.1 or 0.22uF Capacitor under each DRAM
To all DRAMs
A0 B0 A1-A11(A12) W0, OE0 W2, OE2
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg PD IOS
KMM372C160(8)0BK/BS
Rating -1 to +7.0 -1 to +7.0 -55 to +125 18 50 Unit V V °C W mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0*2 Typ 5.0 0 Max 5.5 0 VCC*1 0.8 Unit V V V V
*1 : VCC+2.0V at pulse width20ns, which is measured at VCC. *2 : -2.0V at pulse width20ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Dont care -5 -6 -5 -6 Dont care -5 -6 Don't care Dont care KMM372C1600BK/BS Min
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KMM372C1680BK/BS Min -10 -5 2.4 Max 1620 1440 100 1620 1440 1080 900 30 1260 1440 10 5 0.4
Max 2160 1980 100 2160 1980 1260 1080 30 2160 1980 10 5 0.4
Unit mA mA mA mA mA mA mA mA mA mA uA uA V V
-10 -5 2.4 -
ICC1* : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4* : Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0VVOUTVcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL = 4.2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one Fast page mode cycle time, tPC.
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