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Part: KMM466F404CS2
Category:
Memory
-> DRAM
-> Async DRAM
-> Modules
-> SODIMM
Description: Description = KMM466F404CS2 4M X 64 DRAM Sodimm Using 4Mx16, 4K Refresh 3.3V, Low Power/self-refresh ;; Density(MB) = 32 ;; Organization = 4Mx64 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 144 ;; Component Composition = (4Mx16)x4+EEPROM ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download KMM466F404CS2 datasheet File size : 543 kB
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Datasheet text preview:
DRAM MODULE
KMM466F404CS2-L
KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
GENERAL DESCRIPTION
The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404CS2-L consists of four CMOS 4Mx16bits DRAMs in TSOP 400mil packages and a 2K EEPROM in 8pin TSSOP package mounted on a 144-pin glass-epoxy substrate. A 0.1uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM466F404CS2L is a Small Out-line Dual in-line Memory Module and is intended for mounting into 144 pin edge connector sockets.
FEATURES
· Part Identification - KMM466F404CS2-L(4096 cycles/128ms, TSOP, L-ver) · Extended Data Out Mode Operation · New JEDEC standard proposal with EEPROM · Serial Presense Detect with EEPROM · CAS-before-RAS Refresh capability · Self -refresh capability · RAS-only and Hidden refresh capability · LVTTL compatible inputs and outputs · Single +3.3V±0.3V power supply · PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tR A C
50ns 60ns
tC A C
13ns 15ns
tR C
84ns 104ns
tH P C
20ns 25ns
PIN CONFIGURATIONS
P i n Front 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 V SS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 V SS CAS0 CAS1 VCC A0 A1 A2 V SS DQ8 DQ9 DQ10 DQ11 VCC DQ12 Pin 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Back VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 VSS CAS4 CAS5 VCC A3 A4 A5 VSS DQ40 DQ41 DQ42 DQ43 VCC DQ44 Pin 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 Front DQ13 DQ14 DQ15 V SS RSVD RSVD RFU VCC RFU W RAS0 NC OE V SS RSVD RSVD VCC DQ16 DQ17 DQ18 DQ19 V SS DQ20 DQ21 Pin 50 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 Back DQ45 DQ46 DQ47 VSS RSVD RSVD RFU VCC RFU RFU RFU RFU RFU VSS RSVD RSVD VCC DQ48 DQ49 DQ50 DQ51 VSS DQ52 DQ53 Pin 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 Front DQ22 DQ23 VCC A6 A8 V SS A9 A10 VCC CAS2 CAS3 V SS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 V SS SDA VCC Pin 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 Back DQ54 DQ55 VCC A7 A11 VSS NC NC VCC CAS6 CAS7 Vss DQ56 DQ57 DQ58 DQ59 VCC DQ60 DQ61 DQ62 DQ63 Vss SCL VCC
PIN NAMES
Pin Name A0 to A11 DQ0 - DQ63 W OE RAS0 CAS0 - CAS7 VCC V SS NC SDA SCL RSVD RFU Function Address Inputs Data In/Out Read/Write Enable Output Enable Row Address Strobe Column Address Strobe Power(+3.3V) Ground No Connection Serial Address / Data I/O Serial Clock Reserved Use Reserved for Future Use
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0 W OE A0-A11 CAS0 LCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
U0
KMM466F404CS2-L
CAS4 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CAS5 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
LCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
U2
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
CAS1
UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
CAS2
LCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
U1
CAS6 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 CAS7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
LCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
U3
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
CAS3
UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
VCC 0.1uF Capacitor for each DRAM Vss To all DRAMs SCL
Serial PD A0 A1 A2 SDA
Vss
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
KMM466F404CS2-L
Item Symbol Rating Unit Voltage on any pin relative VSS VIN, VOUT -0.5 to +4.6 V Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V Storage Temperature Tstg -55 to +125 °C Power Dissipation PD 4 W Short Circuit Output Current IO S 50 mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC V SS VIH V IL Min 3.0 0 2.0 -0.3
*2
Typ 3.3 0 -
Max 3.6 0 V C C +0.3*1 0.8
Unit V V V V
*1 : VCC+1.3V at pulse width15ns, which is measured at VCC. *2 : -1.3V at pulse width15ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 ICC7 ICCS II ( L ) IO(L) V OH VOL Speed -5 -6 Dont care -5 -6 -5 -6 Dont care -5 -6 Dont care Dont care Dont care Dont care KMM466F404C S2-L Min
-
Max 480 440 4 480 440 360 320 0.8 480 440 1.4 1.4 10 5 0.4
Unit mA mA mA mA mA mA mA mA mA mA mA mA uA uA V V
-10 -5 2.4 -
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Extended Data Out Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) ICC7 : Battery back-up current. Average power supply, Battery back-up mode. Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS,LCAS=0.2V, Din=Dont care, tRC=31.25us, tRAS=tRASmin~300ns ICCS : Self Refresh Current, RAS=UCAS=LCAS=VIL, W=OE=A0~A11=VCC-0.2V or 0.2V, DQ~DQ63=VCC-0.2V or Open I(IL) : Input Leakage Current (Any input 0VINVcc+0.3V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0VVOUTVCC) VOH : Output High Voltage Level (IOH = -2mA) VOL : Output Low Voltage Level (IOL = 2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC.
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