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Details, datasheet, quote on part number:KMM53216004BK
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| Part: | KMM53216004BK |
| Category: | Memory => DRAM => Async DRAM => Modules => SIMM |
| Description: | Description = KMM53216004BK 16MBx32 DRAM Simm Using 16MBx4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x8 ;; Production Status = Eol ;; Comments = Solder |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download KMM53216004BK datasheet File size : 412 kB |
| Request For quote: | Find where to buy KMM53216004BK
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Datasheet text preview:
DRAM MODULE
KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
KMM53216004BK/BKG
FEATURES
· Part Identification - KMM53216004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004BKG(4K cycles/64ms Ref, SOJ, Gold) · Extended Data Out Mode Operation · CAS-before-RAS & Hidden Refresh capability · RAS-only refresh capability · TTL compatible inputs and outputs · Single +5V±10% power supply · JEDEC standard PDpin & pinout · PCB : Height(1250mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
84ns 104ns
tHPC
20ns 25ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 NC RAS2 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 NC NC W NC DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC Vss
PIN NAMES
Pin Name A0 - A11 DQ0-7, DQ9-16 DQ18-25, DQ27-34 W RAS0, RAS2 CAS0 - CAS3 PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection
PRESENCE DETECT PINS (Optional)
Pin PD1 PD2 PD3 PD4 50NS Vss NC Vss Vss 60NS Vss NC NC NC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
KMM53216004BK/BKG
CAS0 RAS0
DQ1 CAS DQ2 U0 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U1 RAS DQ3 OE W A0-A11 DQ4
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CAS1
DQ1 CAS DQ2 U2 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U3 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U4 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U5 RAS DQ3 OE W A0-A11 DQ4
DQ9 DQ10 DQ11 DQ12 DQ13 DQ12 DQ15 DQ16 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25
CAS2 RAS2
CAS3
DQ1 CAS DQ2 U6 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U7 RAS DQ3 OE W A0-A11 DQ4
DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34
W A0-A11
Vcc Vss
0.1 or 0.22uF Capacitor for each DRAM
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS
KMM53216004BK/BKG
Rating -1 to +7.0 -1 to +7.0 -55 to +125 8 50 Unit V V °C W mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0
*2
Typ 5.0 0 -
Max 5.5 0 VCC*1 0.8
Unit V V V V
*1 : VCC+2.0V at pulse width20ns, which is measured at VCC. *2 : -2.0V at pulse width20ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Dont care -5 -6 -5 -6 Dont care -5 -6 Dont care Dont care KMM53216004BK/BKG Min
-
Max 960 880 16 960 880 880 800 8 960 880 10 5 0.4
Unit mA mA mA mA mA mA mA mA mA mA uA uA V V
-10 -5 2.4 -
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0VVOUTVcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL = 4.2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC.
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