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Part: M368L3313ETM
Category:
Memory
-> DRAM
-> DDR SDRAM
-> Modules
-> Unbuffered DIMM
Description: Description = M368L3313ETM 184Pin Unbuffered Dimm Based on 128Mb E-die (x8) ;; Density(MB) = 256 ;; Organization = 32Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3,AA,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (16Mx8)x16 ;; Production Status = Mass Production ;; Comments = DDR266/333
Company: Samsung Semiconductor, Inc.
Datasheet: Download M368L3313ETM datasheet File size : 224 kB
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Datasheet text preview:
128MB, 256MB Unbuffered DIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 128Mb E-die (x8) 64/72-bit ECC/Non ECC
Revision 1.1
Rev. 1.1 August. 2003
128MB, 256MB Unbuffered DIMM
Revision History
Revision 1.0 (Dec, 2002) - First release Revision 1.1 (August, 2003) - Corrected typo.
DDR SDRAM
Rev. 1.1 August. 2003
128MB, 256MB Unbuffered DIMM
184Pin Unbuffered DIMM based on 128Mb E-die (x8)
Ordering Information
Part Number M368L1713ETM-C(L)B3/AA/A2/B0 M381L1713ETM-C(L)B3/AA/A2/B0 M368L3313ETM-C(L)B3/AA/A2/B0 M381L3313ETM-C(L)B3/AA/A2/B0 D ensity 128MB 128MB 256MB 256MB Organization 16M x 64 16M x 72 32M x 64 32M x 72
DDR SDRAM
Component Composition 16Mx8( K4H280838E) * 8EA 16Mx8( K4H280838E) * 9EA 16Mx8( K4H280838E) * 16EA 16Mx8( K4H280838E) * 18EA
Interface 1,250mil 1,250mil 1,250mil 1,250mil
Operating Frequencies
B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2 .5-3-3 AA(DDR266@CL=2) 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2 -3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Feature
· Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V · Double-data-rate architecture; two data transfers per clock cycle · Bidirectional data strobe(DQS) · Differential clock inputs(CK and CK) · DLL aligns DQ and DQS transition with CK transition · Programmable Read latency 2, 2.5 (clock) · Programmable Burst length (2, 4, 8) · Programmable Burst type (sequential & interleave) · Edge aligned data output, center aligned data input · Auto & Self refresh, 15.6us refresh interval(4K/64ms refresh) · Serial presence detect with EEPROM · PCB : Height 1,250 (mil), single (128MB), double (256MB) sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.1 August. 2003
Others parts begin by m3
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