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Part: M368L6423BT1
Category:
Memory
-> DRAM
-> DDR SDRAM
-> Modules
-> Unbuffered DIMM
Description: Description = M368L6423BT1 64Mx64 DDR Sdram 184pin Dimm Based on 32Mx8 ;; Density(MB) = 512 ;; Organization = 64Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A0,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (32Mx8)x16 ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download M368L6423BT1 datasheet File size : 224 kB
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Datasheet text preview:
M368L6423BT1
184pin Unbuffered DDR SDRAM MODULE
512MB DDR SDRAM MODULE
(64Mx64(32Mx64*2 bank) based on 32Mx8 DDR SDRAM)
Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
Revision 1.1 May. 2002
R e v . 1.1 May. 2002
M368L6423BT1
Revision History
Revision 0 (Aug 1998)
1 . First release for internal usage
184pin Unbuffered DDR SDRAM MODULE
Revision 0.1 (Aug. 1999)
1. Modified binning policy From To -Z (133Mhz) -Z (133Mhz/266Mbps@CL=2) -8 (125Mhz) -Y (133Mhz/266Mbps@CL=2.5) -0 (100Mhz) -0 (100Mhz/200Mbps@CL=2) 2.Modified the following AC spec values From. -Z tAC tDQSCK tDQSQ tDS/tDH tCDLR*1 tPRE*1 tRPST* 1 tHZQ
*1 *1
To. -0 + / - 1ns + / - 1ns + / - 0.75ns 0 . 7 5 ns -Z + / - 0.75ns + / - 0.75ns +/- 0.5ns 0 . 5 ns 1tCK 0 . 9 / 1 . 1 tCK 0 . 4 / 0 . 6 tCK + / - 0.75ns -Y +/- 0.75ns +/- 0.75ns + / - 0.5ns 0 . 5 ns 1tCK 0 . 9 / 1 . 1 tCK 0 . 4 / 0 . 6 tCK +/- 0.75ns -0 + / - 0.8ns + / - 0.8ns + / - 0.6ns 0.6 ns 1tCK 0 . 9 / 1 . 1 tCK 0 . 4 / 0 . 6 tCK +/-0.8ns
+ / - 0.75ns + / - 0.75ns + / - 0.5ns 0 . 5 ns 2.5tCK-tDQSS 1 t C K +/- 0.75ns t C K / 2 +/- 0.75ns t C K / 2 +/- 0.75ns
2.5tCK-tDQSS 1 t C K +/- 1ns t C K / 2 +/- 1ns t C K / 2 +/- 1ns
: Changed description method for the same functionality. This means no difference from the previous version. From tDQCK To tAC
3.Changed the following AC parameter symbol Output data access time from CK/CK
Revision 0.2 (Sept. 1999)
1. Changed the odering information. 1-1. Exclude KM mark. From KMM368... 1-2. PCB Revison From - Blank: 1st generation -A : 2nd generation -B : 2nd generation Example:KMM368L6423AT 1-3. Modified binning policy From - 0 (100Mhz/200Mbps@CL=2) - Z (133Mhz/266Mbps@CL=2) - Y (133Mhz/266Mbps@CL=2.5)
To M368.....
To - 0: 1st gernation - 1: 2nd generation - 2: 3nd generation M368L6423AT0
To - A0 (100Mhz/200Mbps@CL=2) - A2 (133Mhz/266Mbps@CL=2) - B0 (133Mhz/266Mbps@CL=2.5)
R e v . 1.1 May. 2002
M368L6423BT1
Revision 0.3 (December. 1999)
184pin Unbuffered DDR SDRAM MODULE
1. Changed from 3.3V to 2.5V in VDDSPD power.
Revision 0.4 (April. 2000)
1. Changed from 1450mil to 1250mil in PCB height. 2. Changed pin 90 from WP to NC in pin configuration table. 3. Changed in pin configuration table as followings. pin 16 : CK0 -> CK1 pin 17 : CK0 -> /CK1 pin 137 : CK1 -> CK0 pin 138 : CK1 -> /CK0 4. Removed WP in pin description. 5. Changed Clock wiring as followings. CK0 / CK0 6SDRAMs -> 4SDRAMs CK1 / CK1 4SDRAMs -> 6SDRAMs 6. Changed bypassing to reflect common Vdd/Vddq plane. 7. Added A13, BA1. 8. Removed WP from serial PD.
9. Changed Power & DC operating condition. From Min
1.15 V R E F+ 0 . 1 8 -0.3 -5 -15.2 15.2
Parameter
I / O Reference voltage I n p u t logic high voltage I n p u t logic low voltage I n p u t leakage current O u t p u t High Current (V O U T = 1.95V) O u t p u t Low Current (V O U T = 0.35V)
Symbol
VR E F V IH(DC) V IL ( D C ) II IO H IOL
To Max
1.35 V DDQ + 0 . 3 V R E F- 0 . 1 8 5
Min
0.49*VDDQ V R E F+ 0 . 1 5 -0.3 -2 -16.8 16.8
Max
0.51*VDDQ V DDQ + 0 . 3 V R E F- 0 . 1 5 2
10. Added Overshoot/Undershoot spec . Vih(max) = 4.2V, the overshoot voltage duration is 3ns at VDD. . Vil(min) =- 1.5V, the overshoot voltage duration is 3ns at VSS. 11.Changed AC operating conditions as follows. Parameter/Condition I n p u t High (Logic 1) Voltage, DQ, DQS and DM signals I n p u t Low (Logic 0) Voltage, DQ, DQS and DM signals. I n p u t Differential Voltage, CK and CK inputs Symbol VIH(AC) VIL(AC) VID(AC) 0.7 From Min V R E F + 0.35 V R E F - 0.35 VDDQ+0.6 0.62 Max Min V R E F + 0.31 V R E F - 0.31 VDDQ+0.6 To Max
R e v . 1.1 May. 2002
Others parts begin by m3
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