Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: M378T6553CZ3-CD5
 
 
Part numberM378T6553CZ3-CD5
Category
DescriptionDDR2 Unbuffered Sdram Module 240pin Unbuffered Module Based on 512mb C-die 64/72-bit Non-ecc/ecc
CompanySamsung Semiconductor, Inc.
DatasheetDownload M378T6553CZ3-CD5 datasheet
Request For QuoteFind where to buy M378T6553CZ3-CD5
 


 
Specifications, Features, Applications

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Part Number M391T2953CZ3-CE7/E6/D5/CC M391T2953CZ0-CE7/E6/D5/CC Density 512MB 1GB Organization 128Mx64 x72 ECC 64Mx8(K4T51083QC)*9 64Mx8(K4T51083QC)*18 Component Composition 64Mx8(K4T51083QC)*8 64Mx8(K4T51083QC)*16

Note: "Z" of Part number(11th digit) stand for Lead-free products. Note: "3" of Part number(12th digit) stand for Dummy Pad PCB products.

Features

· JEDEC standard ± 0.1V Power Supply· VDDQ 0.1V· 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin· 4 Banks· Posted CAS· Programmable CAS Latency: 4, 5· Programmable Additive Latency: and 4· Write Latency(WL) = Read Latency(RL) -1· Burst Length: , 8(Interleave/nibble sequential)· Programmable Sequential / Interleave Burst Mode· Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)· Off-Chip Driver(OCD) Impedance Adjustment· On Die Termination with selectable values(50/75/150 ohms or disable)· PASR(Partial Array Self Refresh)· Average Refresh Period 7.8us at lower than a TCASE 85°C < TCASE °C - support High Temperature Self-Refresh rate enable feature· Package: 60ball FBGA , 84ball FBGA - 32Mx16· All of Lead-free products are compliant for RoHS

Note: For detailed DDR2 SDRAM operation, please refer to Samsung's Device operation & Timing diagram.

Organization 64Mx8(512Mb) based Module 32Mx16(512Mb) based Module Row Address A0-A13 A0-A12 Column Address A0-A9 Bank Address BA0-BA1 Auto Precharge A10

= No Connect, RFU = Reserved for Future Use Pin196(A13) is used for x4/x8 base Unbuffered DIMM. 2. The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products (DIMMs.)




Related products with the same datasheet
M378T6453FG0-CCC   M378T6453FG0-CD5   M378T6453FG0-CE6   M378T6453FG0-D5   M378T6453FG3-CCC   M378T6453FG3-CD5  
M378T6453FG3-CE6   M378T6453FGZ0-CE6/D5/CC   M378T6453FGZ3-CE6/D5/CC   M378T6453FZ0   M378T6453FZ0-CCC   M378T6453FZ0-CD5  


Some Part number from the same manufacture Samsung Semiconductor, Inc.
M378T6553CZ3-CE6 DDR2 Unbuffered Sdram Module 240pin Unbuffered Module Based on 512mb C-die 64/72-bit Non-ecc/ecc
S3C9234 8-bit CMOS Microcontroller
CW5322X Sdh104
K4S280432E-TC75 128mb F-die Sdram Specification 54 Tsop-ii with Pb-free (rohs Compliant)
KM29V32000IT 4M X 8 BIT NAND Flash Memory
K8D6316UBM-DC07 64M Bit (8M X8/4m x16) Dual Bank NOR Flash Memory
M366S1623DT0-C75 Sdram Unbuffered Module
KS0076B 16com/40seg Driver & Controller FOR DOT Matrix LCD
KAB04D100M-TLGP Multi-chip Package Memory
MR18R16224DF0 Key Timing Parameters