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Part: M381L6423ETM-CLB0

Category:
 Memory
   -> DRAM
     -> DDR SDRAM
       -> Modules
         -> Unbuffered DIMM

Description: Description = M381L6423ETM 184Pin Unbuffered Dimm Based on 256Mb E-die (x8) ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (32Mx8)x18 ;; Production Status = Mass Production ;; Comments = DDR266/300,DDR400

Company: Samsung Semiconductor, Inc.

Datasheet: Download M381L6423ETM-CLB0 datasheet     File size : 680 kB

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Datasheet text preview:
256MB, 512MB Unbuffered DIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC
Revision 1.1 August. 2003
Rev. 1.1 August. 2003
256MB, 512MB Unbuffered DIMM
Revision History
Revision 1.0 (April, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo.
DDR SDRAM
Rev. 1.1 August. 2003
256MB, 512MB Unbuffered DIMM
184Pin Unbuffered DIMM based on 256Mb E-die (x8,)
Ordering Information
Part Number M368L3223ETN-C(L)B3/AA/A2/B0 M381L3223ETM-C(L)B3/AA/A2/B0 M368L6423ETN-C(L)B3/AA/A2/B0 M381L6423ETM-C(L)B3/AA/A2/B0 D ensity 256MB 256MB 512MB 512MB Organization 32M x 64 32M x 72 64M x 64 64M x 72
DDR SDRAM
Component Composition 32Mx8 (K4H560838E) * 8EA 32Mx8 (K4H560838E) * 9EA 32Mx8 (K4H560838E) * 16EA 32Mx8 (K4H560838E) * 18EA
Height 1,250mil 1,250mil 1,250mil 1,250mil
Operating Frequencies
B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2 .5-3-3 AA(DDR266@CL=2) 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2 -3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Feature
· Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V · Double-data-rate architecture; two data transfers per clock cycle · Bidirectional data strobe(DQS) · Differential clock inputs(CK and CK) · DLL aligns DQ and DQS transition with CK transition · Programmable Read latency 2, 2.5 (clock) · Programmable Burst length (2, 4, 8) · Programmable Burst type (sequential & interleave) · Edge aligned data output, center aligned data input · Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) · Serial presence detect with EEPROM · PCB : Height 1,250 (mil), single (256MB), double (512MB) sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.1 August. 2003


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