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Part: S1T0567X01-S0B0
Category:
Communication
-> Telephony
Description: Description = S1T0567 Tone Decoder ;; Function = Tone Decoder ;; Features = Wide Frequency Range(0.01Hz to 500KHz),High Rejection of Out-of-band Signals And Noise ;; Package = 8DIP,8SOP ;; Production Status = Mass Production
Company: Samsung Semiconductor, Inc.
Datasheet: Download S1T0567X01-S0B0 datasheet File size : 943 kB
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Datasheet text preview:
TONE DECODER
S1T0567
INTRODUCTION
The S1T0567 is a monolithic phase-locked loop system designed to provide a saturated transistor switch to GND when an input signal is present within the bandpass. External components are used to independently set the center frequency bandwidth and output delay. 8-DIP-300
FEATURES
· · · · · · Wide frequency range (0.01Hz -- 500kHz) Bandwidth adjustable from 0 to 14% Logic compatible output with 100mA current sinking capability Inherent immunity to false signals High rejection of out-of-band signals and noise Frequency range adjustable over 20:1 range by an external resistor
8-SOP-225
APPLICATIONS
· · · · · · · Touch Tone Decoder Wireless Intercom Communications paging decoders Frequency monitoring and control Ultrasonic controls (TV remote controls, etc.) Carrier current remote controls Precision oscillator
ORDERING INFORMATION
Device S1T0567X01-D0B0 S1T0567X01-S0B0 Package 8-DIP-300 8-SOP-225 Operating Temperature 0°C to + 70°C
1
S1T0567
TONE DECODER
BLOCK DIAGRAM
OUTPUT FILTER
1 2 3 4
Amp.
8 7 6 5
OUTPUT
LOOP FILTER
INPUT
Quadrature Phase Detector
GND
TIMING CAPACITOR
Vcc
Phase Locked Loop (PLL)
TIMING RESISTOR
ABSOLUTE MAXIMUM RATINGS
Characteristic Supply Voltage Input Voltage Output Voltage Power Dissipation Operating Temperature Storage Temperature V CC VI VO PD TOPR TSTG Symbol Value 10 -10 -- V C + 0.5 C 15 300 0 -- + 70 - 65 -- + 150 Unit V V V mW °C °C
2
TONE DECODER
S1T 0 5 6 7
ELECTRICAL CHARACTERISTICS
(VCC = 5.0 V, Ta = 25°C unless otherwise specified) Characteristic Operating voltage range Operating current quiescent Operating current activated Quiescent power dissipation High center frequency Center frequency stability Center frequency shift with supply voltage Largest detection bandwidth Largest detection B.W skew Largest detection bandwidth variation with supply voltage Largest detection bandwidth variation with temperature Input Resistance Smallest detectable input voltage Largest No output input voltage Greatest simultaneous outband signal to inband signal ratio Minimum input signal to wideband noise ratio Fastest On-Off cycling rate Output leakage current Output saturation voltage Output fall time Output rise time Symbol V CC ICC (Q) ICC (A) PD (Q) f HC f ST fC/VCC BWDET BWDET BW/VCC BW/T RI VI (SMALL) VI (LARGE) S1/SD - IL = 100mA, fi = fo 10 RL = 20K VIN = 300mVrms fi = fo = 100 kHz fi1 = 140kHz fi2 = 60kHz RL = 20 K VIN = 2 5mVrms IL = 300mA, VIN = 25mVrms IL = 100mA, VIN = 25mVrms RL = 50 RL = 50 - - Test Conditions Min. 4.75 RL = 20K Typ. 5.0 7 12 35 500 ± 60 0.7 14 2 ±2 ± 0.1 20 20 15 +6 -6 - 25 - Max. 9.0 10 15 Unit V mA mA mW kHz ppm/° C %/V % of fo % of fo %/V %/° C Kohm mVrms mVrms dB
100 RL = 20K Ta = 0°C to 70°C 10 -
2 18 3 ±5
S2/SD
dB
C R (ON-OFF) IO (LKG) V SAT1 V SAT2 tF tR
- - -
fo/20 0.01 0.2 0.6 30 150
25 0.4 1.0 -
µA V V nS nS
3
Others parts begin by s1
S1-1 S1-2 S1-3 S1-4 S1-5 S1-6
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