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Part: 2SA1493

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose
           -> PNP

Description:

Company: Sanken Electric Co.

Datasheet: Download 2SA1493 datasheet     File size : 178 kB

Request For quote: Find where to buy 2SA1493



Datasheet text preview:
2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1493 ­200 ­200 ­6 ­15 ­5 150(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Audio and General Purpose
(Ta=25°C) 2SA1493 ­100max ­100max ­200min 50min ­ 3.0max 20typ 400typ V MHz pF
20.0min 4.0max

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=­200V VEB=­6V IC=­50mA VCE=­4V, IC=­5A IC=­10A, IB=­1A VCE=­12V, IE=0.5A VCB=­10V, f=1MHz

External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2

Unit

µA µA
V
a b

2 3
02 1.05 +0..1 02 0.65 +0..1 -

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45±0.1 B C E

5.45±0.1

03 3.0 +0..1 -

sTypical Switching Characteristics (Common Emitter)
VCC (V) ­60 RL () 12 IC (A) ­5 VBB1 (V) ­10 VBB2 (V) 5 IB1 (mA) ­500 IB2 (mA) 500 ton (µs) 0.3typ tstg (µs) 0.9typ tf (µs) 0.2typ

Weight : Approx 18.4g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) ­15
5A ­1.

V C E ( s a t ) ­ I B Characteristics (Typical)
­3

I C ­ V B E Temperature Characteristics (Typical)
­15 ( V CE= ­ 4 V )

­1

A

­

0 60

mA
­400 mA

C o l l e c t o r Current I C ( A )

­200m

A

­10
­100mA

C o l l e c t o r Current I C ( A )

­2

­10

eTe mp) Temp )

I B= ­ 5 0 m A
­5

°C (

I C= ­ 1 5 A ­10A ­5A 0 0 ­1 ­2 ­3 ­4 0 0

25°C

0

0

­1

­2

­3

­4

­30°C

125

(CaseT

Cas

(Case

­1

­5

­1 B a s e - E m i t t o r Voltage V B E ( V )

emp)

­2

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( A )

h F E ­ I C Characteristics (Typical)
( V CE= ­ 4 V ) 300 D C C u r r e n t G a i n h FE

h F E ­ I C Temperature Characteristics (Typical)
( V CE= ­ 4 V ) 200 D C C u r r e n t G a i n h FE 125°C 25°C 100 ­30°C Transient Thermal Resistance j - a ( ° C / W ) 2

j - a ­ t Characteristics

1

Typ
100 50

0.5

50

10 ­0.02

­0.1

­0.5

­1

­5 ­10 ­15

20 ­0.02

­0.1

­0.5

­1

­5

­10 ­15

0.1

1

10

100 T i m e t(ms)

1000

2000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

f T ­ I E Characteristics (Typical)
( V CE= ­ 1 2 V ) 30 ­50

Safe Operating Area (Single Pulse)
160
3m

P c ­ T a Derating

20
Typ
C u t - o f f F r e q u e n c y f T( M H Z) C o l l e c t o r Cu r r e n t I C ( A ) ­10 ­5

D

C

10

M a x i m u m Power Dissip a t i o n P C ( W )

m

s
0m

s 10ms

120

W

20

s

ith In fin ite he

80

at si nk

­1 ­0.5 W i t h o u t Heatsink N a t u r a l Cooling

10

40

0 0.02

­0.1 0.1 1 E m i t t e r Current I E ( A ) 10 ­2 ­10 ­100 ­300 C o l l e c t o r - E m i t t e r Voltage V C E ( V )

5 0

W i t h o u t Heatsink 0 25 50 75 100 125 150

A m b i e n t Temperature Ta(°C)

21




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