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Part: 2SA1860

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose
           -> PNP

Description:

Company: Sanken Electric Co.

Datasheet: Download 2SA1860 datasheet     File size : 152 kB

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Datasheet text preview:
LAPT

2SA1860
Application : Audio and General Purpose
(Ta=25°C) 2SA1860 ­100max ­100max ­150min 50min ­2.0max 50typ 400typ V MHz
16.2

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1860 ­150 ­150 ­5 ­14 ­3 80(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=­150V VEB=­5V IC=­25mA VCE=­4V, IC=­5A IC=­5A, IB=­500mA VCE=­12V, IE=2A VCB=­10V, f=1MHz

External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6

Unit

µA
23.0±0.3

V

9.5±0.2

µA

a b

pF

1.75 2.15
02 1.05 +0..1 -

3.3

0.8

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

sTypical Switching Characteristics (Common Emitter)
VCC (V) ­60 RL () 12 IC (A) ­5 VBB1 (V) ­10 VBB2 (V) 5 IB1 (mA) ­500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ

5.45±0.1 1.5 4.4

5.45±0.1 1.5

02 0.65 +0..1 -

3.35

B

C

E

Weight : Approx 6.5g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
­14 C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V )
A m mA mA mA 00 500 400 00 ­ ­3 ­6 ­

V C E ( s a t ) ­ I B Characteristics (Typical)
­3

I C ­ V B E Temperature Characteristics (Typical)
­14 ( V CE= ­ 4 V )

00

mA

­7

­200

mA

C o l l e c t o r Current I C ( A )

­150mA
­10
­100mA

C o l l e c t o r Current I C ( A )

­10

­2

p)

Tem

p)

se

­5

­50mA

C (C

°C

125

0

0

­1

­2

­3

­4

0

0

­0.2

­0.4

­0.6

­0.8

­1.0

0

0

­30

­5A

25°

I B= ­ 2 0 m A

­1 B a s e - E m i t t o r Voltage V B E ( V )

°C (

Cas

I C= ­ 1 0 A

(Ca

ase

eT

­1

­5

Tem

emp

)

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( A )

( V CE= ­ 4 V ) 200 D C Cur r e n t Gain h F E D C Cur r e n t Gain h F E

( V CE= ­ 4 V ) 200 125°C

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

h F E ­ I C Temperature Characteristics (Typical)

j - a ­ t Characteristics
3

100

Typ

100

25°C ­30°C

1 0.5

50

50

20 ­0.02

­0.1

­0.5

­1

­5

­10 ­14

30 ­0.02

­0.1

­0.5

­1

­5

­10 ­14

0.1

1

10

100 T i m e t(ms)

1000 2000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

f T ­ I E Characteristics (Typical)
( V CE= ­ 1 2 V ) 80 ­40

Safe Operating Area (Single Pulse)
80
1m s

P c ­ T a Derating

C u t - o f f Fre q u e n c y f T ( M H Z )

­10 60 C o l l e c t o r Cur r e n t I C ( A )

10

m

D

C

0m

s

M a x i m u m Power Dissipa t i o n P C ( W )

10
s

60

Typ

­5

40

40

­1 ­0.5 Without Heatsink Natural Cooling ­0.1

20

20

Without Heatsink ­5 ­10 ­50 ­100 ­200 3.5 0 0 25 50 75 100 125 150

0 0.02

0.1

1

10

­0.05 ­2

E m i t t e r Current I E ( A )

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

A m b i e n t Temperature Ta(°C)

34

3.0

­2

W ith In fin ite he at si nk




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