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Part: 2SC3680
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC3680 datasheet File size : 205 kB
Request For quote: Find where to buy 2SC3680
Datasheet text preview:
2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.5 120(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
2SC3680
Unit
µA µA
19.9±0.3
4.0
V V MHz pF
a b
ø3.2±0.1
20.0min
4.0max
V
2 3
02 1.05 +0..1 02 0.65 +0..1 -
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.45 IB2 (A) 1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 B C E
5.45±0.1
1.4
Weight : Approx 6.0g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
7
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
7 ( V CE= 4 V )
1A
700mA
6
500mA
1
55°C (Cas
25°C (C
V BE( s a t )
e Temp)
p)
6 C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
p) Tem
4
300mA
ase Tem
4
Temp (Case
)
emp
(C
12
5°
V CE( s a t ) 0 0.02 0.05 0.1 0.5 1
5
0
25
C
°C
as
2
5°C
0
1
2
3
4
57
0
0
0.2
0.4
125°
2
0.6
0.8
55°C (C
eT
25°C
I B= 1 0 0 m A
C (C
ase
125°C
(Case
ase Tem
200mA
) Temp
)
p)
1.0
1.2
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 D C Cur r e n t Gain h F E 10
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
5°
S w i t c h i n g T i m e t on·t stg·t f( µ s )
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
2
12
25°C
C
5 V C C 250V I C: I B1: I B2= 2 : 0 . 3 : 1 C o n s t .
t stg
1
55°C
0.5
1 0.5 t on 0.2 0.1
tf
10
5 0.02
0.05
0.1
0.5
1
5
7
0.5
1
5
7
0.1
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Curren t I C ( A )
10
Reverse Bias Safe Operating Area
20 120
P c T a Derating
s
M a x i m u m Power Dissipa t i o n P C ( W )
m
1m
10
s
0µ
s
10 5 C o l l e c t o r Curren t I C ( A ) 100
W ith In fin
1 0.5
1 0.5
ite he at si nk
50
0.1 0.05
W i t h o u t Heatsink N a t u r a l Cooling
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
0.01 2
5
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
W i t h o u t Heatsink 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
69
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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