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Part: 2SC3927
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC3927 datasheet File size : 172 kB
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Datasheet text preview:
2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3927 900 550 7 10(Pulse15) 5 120(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC3927 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V MHz pF
20.0min 4.0max 3
02 1.05 +0..1 02 0.65 +0..1 -
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.75 IB2 (A) 1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
1.4
Weight : Approx 6.0g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
10
1. 2A
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
10 ( V CE= 4 V )
1A
800mA
600mA
C o l l e c t o r Current I C ( A )
55°C (C
25°C (C
ase Temp)
p)
6
400mA
ase Tem
C o l l e c t o r Current I C ( A )
8
1
V BE( s a t ) 8
6
p)
mp
4
4
eT
200mA
125°C
(Case 25°C
Cas
(C a
I B= 1 0 0 m A
125
°C (
12
25
2
C 5°
2
°C
V CE( s a t ) 0 0.02 0.05 0.1 0.5 1
5 5
0
0
1
2
3
4
5
10
0
0
0.2
0.4
0.6
0.8
55°C
°C
(Case
se
Te
Temp)
)
em
(Case
Temp
T
emp)
)
1.0
1.2
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
h F E I C Characteristics (Typical)
( V CE= 4 V ) 50 S w i t c h i n g Ti m e ton·t s t g · t f ( µ s )
125°C
t o n · t s t g · t f I C Characteristics (Typical)
Transient Thermal Resistance j-a(°C/W) 10 2
j - a t Characteristics
D C C u r r e n t G a i n h FE
25°C
5 V C C 250V I C: I B1: I B2= 1 0 : 1 . 5 : 3
t stg
1
55°C
1 0.5 t on tf 0.1 0.2 0.5 1 C o l l e c t o r Current I C ( A ) 5 10
0.5
10
5 0.02
0.05
0.1
0.5
1
5
10
0.1
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Cu r r e n t I C ( A )
DC
10
Reverse Bias Safe Operating Area
20 120
P c T a Derating
s
M a x i m u m Power Dissipat i o n P C ( W )
ms
1m
10
10
0µ s
5 C o l l e c t o r Cu r r e n t I C ( A )
100
W ith In fin ite
1 0.5
1 0.5
he at si nk
50
0.1 0.05 0.02 10
W i t h o u t Heatsink N a t u r a l Cooling
0.1 0.05 0.02 50
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1% 100 500 1000
50
100
500 600
3.5 0
W i t h o u t Heatsink 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
82
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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