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Part: 2SC4297
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC4297 datasheet File size : 192 kB
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Datasheet text preview:
2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=1A VCB=10V, f=1MHz
(Ta=25°C) Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
16.2
1.75 2.15
02 1.05 +0..1 -
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.7 IB2 (A) 1.4 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
5.45±0.1 1.5 4.4
5.45±0.1 1.5
02 0.65 +0..1 -
3.35
B
C
E
Weight : Approx 6.5g a. Part No. b. Lot No.
I C V C E Characteristics (Typical)
12
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
12 ( V CE= 4 V )
1A
10 C o l l e c t o r Current I C ( A )
800mA
600mA
10 1
55°C (Case 25°C (Ca
125°C
C o l l e c t o r Current I C ( A )
V BE( s a t )
8
400mA
Temp) )
8
p)
6
se Temp
as e 2 5 Temp ) °C
(Cas
4
4
(Ca
200mA
I B= 1 0 0 m A
2
12
5°
V CE( s a t ) 0 0.02 0.05 0.1 0.5 1 5
5
5°
C
2
0
0
1
2
3
4
10
0
0
0.2
0.4
0.6
0.8
55°C
C
25°C
125
(C
1.0
(Case
°C
Temp
e Te
se
Te (Case
mp)
Tem
mp)
6
)
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 S w i t c h i n g T i m e t on·t stg·t f( µ s )
125°C
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
8 5
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
2
D C Cur r e n t Gain h F E
t stg V C C 200V I C: I B1: I B2= 1 0 : 1 : 2 1 0.5 t on
25°C
30°C
1
0.5
10
tf 0.1 0.5 1 C o l l e c t o r Current I C ( A ) 5 10
5 0.02
0.05
0.1
0.5
1
5
10 12
0.1
1
10 T i m e t(ms)
100
3.0
1.2
1000
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
30
10 0µ s
Reverse Bias Safe Operating Area
30 80
P c T a Derating
10 C o l l e c t o r Cu r r e n t I C ( A ) C o l l e c t o r Curr e n t I C ( A ) 5
10 5
M a x i m u m Power Dissipa t i o n P C ( W )
60
W ith In fin ite he
40
at si nk
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=1A Duty:less than 1%
W i t h o u t Heatsink N a t u r a l Cooling
20
0.1 5 10 50 100 500 C o l l e c t o r - E m i t t e r Voltage V C E ( V )
0.1 5
10
50
100
500
3.5 0
W i t h o u t Heatsink 0 50 100 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
96
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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