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Part: 2SC4300

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose
           -> NPN

Description:

Company: Sanken Electric Co.

Datasheet: Download 2SC4300 datasheet     File size : 192 kB

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Datasheet text preview:
2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 5(Pulse10) 2.5 75(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Switching Regulator and General Purpose
(Ta=25°C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V V
16.2

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=­0.5A VCB=10V, f=1MHz

External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6

Unit

µA
23.0±0.3

V

9.5±0.2

µA

a b

MHz pF

1.75 2.15
02 1.05 +0..1 -

3.3

0.8

sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) ­5 IB1 (A) 0.3 IB2 (A) ­1 ton (µs) 1max tstg (µs) 5max tf (µs) 1max

5.45±0.1 1.5 4.4

5.45±0.1 1.5

02 0.65 +0..1 -

3.35

B

C

E

Weight : Approx 6.5g a. Part No. b. Lot No.

I C ­ V C E Characteristics (Typical)
5

V C E ( s a t ) , V B E ( s a t ) ­ I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )

I C ­ V B E Temperature Characteristics (Typical)
5 ( V CE= 4 V )

700mA
600mA
500mA

2

C o l l e c t o r Current I C ( A )

300mA

3
200mA

C o l l e c t o r Current I C ( A )

4

400mA

4

3
p) Tem

Temp

)

I B= 1 0 0 m A

Te m p) 25° C ­55°C

1

1

V CE( s a t ) 0 0.03 0.05 0.1 0.5

C 125°C (

as

e

0

0

1

2

3

4

1

5

10

0

0

0.2

0.4

0.6

0.8

­55°C (C

­55°C (Case Temp) 25°C (Case Temp) e Temp) 125°C (Cas

C (C

2

1

2

25°C

125°

(Case

V BE( s a t )

ase Tem

ase

p)

1.0

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r Current I C ( A )

B a s e - E m i t t o r Voltage V B E ( V )

( V CE= 4 V ) 50 S w i t c h i n g T i m e ton·t s t g · t f ( µ s ) D C Cur r e n t Gai n h F E 10 t stg VCC 250V IC:IB1:­IB2 =2:0.3:1 Const.

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

t o n · t s t g · t f ­ I C Characteristics (Typical)

j - a ­ t Characteristics
2

125°C
25°C

5

1

­55°C

0.5

1 0.5 t on 0.2 0.1 0.5

tf

10

5 0.02

0.05

0.1

0.5

1

5

1

5

0.1

1

10 T i m e t(ms)

100

3.0

1.2

1000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Cur r e n t I C ( A )
10
10 µs

Reverse Bias Safe Operating Area
20 10 80

P c ­ T a Derating

1m



s

s

5 C o l l e c t o r Cu r r e n t I C ( A )

M a x i m u m Power Dissipatio n P C ( W )

60

W ith In

1 0.5

fin

1 0.5

ite he

40

at si nk

0.1 0.05

W i t h o u t Heatsink N a t u r a l Cooling

0.1 0.05

Without Heatsink Natural Cooling L=3mH IB2=­1.0A Duty:less than 1%

20

0.01

10

50

100

500

1000

0.01 50

100

500

1000

3.5 0

W i t h o u t Heatsink 0 50 100 150

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

A m b i e n t Temperature Ta(°C)

99




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