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Part: 2SC4300
Category: Discrete -> Transistors -> Bipolar -> Power -> General Purpose -> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC4300 datasheet File size : 192 kB
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Datasheet text preview:
2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 5(Pulse10) 2.5 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V V
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
MHz pF
1.75 2.15
02 1.05 +0..1 -
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 1 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 1.5 4.4
5.45±0.1 1.5
02 0.65 +0..1 -
3.35
B
C
E
Weight : Approx 6.5g a. Part No. b. Lot No.
I C V C E Characteristics (Typical)
5
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
5 ( V CE= 4 V )
700mA
600mA
500mA
2
C o l l e c t o r Current I C ( A )
300mA
3
200mA
C o l l e c t o r Current I C ( A )
4
400mA
4
3
p) Tem
Temp
)
I B= 1 0 0 m A
Te m p) 25° C 55°C
1
1
V CE( s a t ) 0 0.03 0.05 0.1 0.5
C 125°C (
as
e
0
0
1
2
3
4
1
5
10
0
0
0.2
0.4
0.6
0.8
55°C (C
55°C (Case Temp) 25°C (Case Temp) e Temp) 125°C (Cas
C (C
2
1
2
25°C
125°
(Case
V BE( s a t )
ase Tem
ase
p)
1.0
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 S w i t c h i n g T i m e ton·t s t g · t f ( µ s ) D C Cur r e n t Gai n h F E 10 t stg VCC 250V IC:IB1:IB2 =2:0.3:1 Const.
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
2
125°C
25°C
5
1
55°C
0.5
1 0.5 t on 0.2 0.1 0.5
tf
10
5 0.02
0.05
0.1
0.5
1
5
1
5
0.1
1
10 T i m e t(ms)
100
3.0
1.2
1000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Cur r e n t I C ( A )
10
10 µs
Reverse Bias Safe Operating Area
20 10 80
P c T a Derating
1m
0µ
s
s
5 C o l l e c t o r Cu r r e n t I C ( A )
M a x i m u m Power Dissipatio n P C ( W )
60
W ith In
1 0.5
fin
1 0.5
ite he
40
at si nk
0.1 0.05
W i t h o u t Heatsink N a t u r a l Cooling
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
20
0.01
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
W i t h o u t Heatsink 0 50 100 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
99
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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