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Part: 2SC4304
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC4304 datasheet File size : 192 kB
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Datasheet text preview:
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 3(Pulse6) 1.5 35(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=0.3A VCB=10V, f=1MHz Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
V V V MHz pF
13.0min 16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15
02 0.85 +0..1 02 0.45 +0..1 2.54
3.9
±0.2
0.8±0.2
a b
ø3.3±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.35 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.7max
2.54 2.2±0.2
2.4±0.2
BCE
Weight : Approx 2.0g a. Part No. b. Lot No.
I C V C E Characteristics (Typical)
3
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
3 ( V CE= 4 V )
700mA
500mA
V CE( s a t ) 2
25°C (Case Temp)
125°C (Case Temp)
C o l l e c t o r Current I C ( A )
300mA
2
200mA
C o l l e c t o r Current I C ( A )
55°C (Case Temp)
2
mp)
mp) (Cas e Te
100mA
1
V BE( s a t )
p) 55°C (Case Tem p) 25°C (Case Tem Temp) 125°C (Case
Cas
25°C
0
0
1
2
3
4
0 0.01
0.05
0.1
0.5
1
3
0
0
0.2
0.4
0.6
0.8
55°C
I B= 5 0 m A
125
°C (
1
1
(Cas
e Tem
e Te
p)
1.0
1.2
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 D C C u r r e n t G a i n h FE S w i t c h i n g Time ton·t s t g · t f ( µ s ) 125°C 25°C 55°C 10 7 5 V C C 250V I C: I B1: I B2= 1 0 : 1 . 5 : 5 1 tf 0.5 t on 0.1 0.1 t stg
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
4
1
5
0.5 0.3
2 0.01
0.05
0.1
0.5
1
3
0.5 C o l l e c t o r Current I C ( A )
1
2
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
10 5
50 µs
10 0µ
Reverse Bias Safe Operating Area
10 5 M a x i m u m Powe r Dissipat i o n P C ( W ) 30 35
P c T a Derating
W ith
C o l l e c t o r Curr e n t I C ( A )
1 0.5
C o l l e c t o r Cur r e n t I C ( A )
1 0.5
s
1m
DC ( Tc =2 5 C )
In
s
fin ite
10 ms
20
he at si nk
0.1 0.05 W i t h o u t Heatsink N a t u r a l Cooling 0.01
0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
10
0.01 5 10 50 100 500 1000 0.005 50 100 500 1000 2 0
W i t h o u t Heatsink 0 25 50 75 100 125 150
0.005 2
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
101
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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