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Part: 2SC4495

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose
           -> NPN

Description:

Company: Sanken Electric Co.

Datasheet: Download 2SC4495 datasheet     File size : 83 kB

Request For quote: Find where to buy 2SC4495



Datasheet text preview:
High hFE LOW VCE (sat)
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 80 50 6 3 1 25(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

2SC4495
Application : Audio Temperature Compensation and General Purpose
(Ta=25°C) Ratings 10max 10max 50min 500min 0.5max 40typ 30typ V MHz pF
13.0min

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=­0.1A VCB=10V,f=1MHz

External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5

Unit

µA
V
16.9±0.3 8.4±0.2

µA

1.35±0.15 1.35±0.15
02 0.85 +0..1 02 0.45 +0..1 2.54

3.9

±0.2

0.8±0.2

a b

ø3.3±0.2

sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL () 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) ­5 IB1 (mA) 15 IB2 (mA) ­30 ton (µs) 0.45typ tstg (µs) 1.60typ tf (µs) 0.85typ

2.54 2.2±0.2

2.4±0.2

BCE

Weight : Approx 2.0g a. Part No. b. Lot No.

I C ­ V C E Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) 3
3 0m A

V C E ( s a t ) ­ I B Characteristics (Typical)
1.5

I C ­ V B E Temperature Characteristics (Typical)
3 ( V CE= 4 V )

1

A 8m

12m

A
8mA

2.5 C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

2

5mA
3mA

1

2

1.5
Temp) ­55°C (Case
Tem p) mp) (Ca 125

2mA

1mA

I C= 1 A
0 0

0

0

1

2

3

4

5

6

1

10

100

1000

0

0.5

25°C

0.5

°C

I B= 0 . 5 m A

2A

(Cas

e Te

1

0.5

se

3A

1

1

1.5

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( m A )

B a s e - E m i t t o r Voltage V B E ( V )

h F E ­ I C Characteristics (Typical)
( V CE= 4 V ) 3000 D C Cur r e n t Gain h F E

h F E ­ I C Temperature Characteristics (Typical)
( V CE= 4 V ) 5000 D C Cur r e n t Gai n h F E Transient Thermal Resistance j - a ( ° C / W ) 7 5

j - a ­ t Characteristics

Typ
1000

125°C 25°C ­55°C

1000 500

500

100 50 20 0.01

100 0.01

0.1

0.5

1

3

0.1

0.5

1

3

1

1

10

100 T i m e t(ms)

1000 2000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

f T ­ I E Characteristics (Typical)
( V CE= 1 2 V ) 60 10 5 C u t - o f f Fre q u e n c y f T ( M H Z )

Safe Operating Area (Single Pulse)
30
1m
10 m s

P c ­ T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20
W ith In

s

C o l l e c t o r Cur r e n t I C ( A )

Typ
40

DC

1 0.5

M a x i m u m Power Dissipa t i o n P C ( W )

10 0m s

fin

150x150x2
1 0 0 x1 0 10
0x 2

ite

he

at

20

si

nk

W i t h o u t Heatsink N a t u r a l Cooling 0.1

50x50x2
W i t h o u t Heatsink 2

0 ­0.005 ­0.01

0.05 ­0.1 E m i t t e r Current I E ( A ) ­1 3 5 10 50 100 C o l l e c t o r - E m i t t e r Voltage V C E ( V )

0

0

25

50

75

100

125

150

A m b i e n t Temperature Ta(°C)

110




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