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Part: 2SC4907

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose
           -> NPN

Description:

Company: Sanken Electric Co.

Datasheet: Download 2SC4907 datasheet     File size : 257 kB

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Datasheet text preview:
2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 600 500 10 6(Pulse12) 2 30(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=­0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ

(Ta=25°C) Ratings Unit mA V V V MHz pF

16.9±0.3

8.4±0.2

µA

13.0min

1.35±0.15 1.35±0.15
02 0.85 +0..1 02 0.45 +0..1 2.54

3.9

±0.2

0.8±0.2

a b

ø3.3±0.2

sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) ­5 IB1 (A) 0.2 IB2 (A) ­0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max

2.54 2.2±0.2

2.4±0.2

BCE

Weight : Approx 2.0g a. Part No. b. Lot No.

I C ­ V C E Characteristics (Typical)
6
1A

V C E ( s a t ) , V B E ( s a t ) ­ I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) 2 ( I C/ I B= 5 )

I C ­ V B E Temperature Characteristics (Typical)
6 ( V CE= 4 V )

800mA

5 C o l l e c t o r Current I C ( A )

600mA

5 C o l l e c t o r Current I C ( A )

4

400mA

4

300mA
3
200mA

V BE( s a t ) 1
p) ­55°C (Case Tem Temp) 25°C (Case Temp) (Case 125°C
ase

3
mp

) se T emp

(Ca

se

I B= 1 0 0 m A
1

V CE( s a t ) 0 0.02 0.05 0.1

(C 125°C

­5



C

0

0

1

2

3

4

0.5

1

5

0

0

0.2

0.4

0.6

25°C

0.8

­55°

125

Te

m

1

°C

C (C

(Ca

p)

ase

2

25°C

2

Te

Tem

p)

)

1.0

1.2

1.4

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r Current I C ( A )

B a s e - E m i t t o r Voltage V B E ( V )

( V CE= 4 V ) 50 D C C u r r e n t G a i n h FE S w i t c h i n g Time ton·t s t g · t f ( µ s ) 7 5 V C C 200V I C: I B1: I B2= 1 0 : 1 : ­ 2 1 0.5 t stg

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

t o n · t s t g · t f ­ I C Characteristics (Typical)

j - a ­ t Characteristics
4

125°C

25°C

­55°C

1

10

t on

0.5 0.3

tf 0.1 0.2 0.5 1 5 6

5 0.02

0.05

0.1

0.5

1

56

1

10 T i m e t(ms)

100

1000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Cur r e n t I C ( A )
10 0µ

Reverse Bias Safe Operating Area
20 10 5 30

P c ­ T a Derating

s

M a x i m u m Power Dissipa t i o n P C ( W )

W ith

C o l l e c t o r Cur r e n t I C ( A )

20

In fin ite he at si

1

1 Without Heatsink Natural Cooling L=3mH IB2=­0.5A Duty:less than 1%

nk

0.5

W i t h o u t Heatsink N a t u r a l Cooling

0.5

10

W i t h o u t Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

A m b i e n t Temperature Ta(°C)

121




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