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Part: 2SC4907
Category: Discrete -> Transistors -> Bipolar -> Power -> General Purpose -> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC4907 datasheet File size : 257 kB
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Datasheet text preview:
2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 600 500 10 6(Pulse12) 2 30(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ
(Ta=25°C) Ratings Unit mA V V V MHz pF
16.9±0.3
8.4±0.2
µA
13.0min
1.35±0.15 1.35±0.15
02 0.85 +0..1 02 0.45 +0..1 2.54
3.9
±0.2
0.8±0.2
a b
ø3.3±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.2 IB2 (A) 0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max
2.54 2.2±0.2
2.4±0.2
BCE
Weight : Approx 2.0g a. Part No. b. Lot No.
I C V C E Characteristics (Typical)
6
1A
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) 2 ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
6 ( V CE= 4 V )
800mA
5 C o l l e c t o r Current I C ( A )
600mA
5 C o l l e c t o r Current I C ( A )
4
400mA
4
300mA
3
200mA
V BE( s a t ) 1
p) 55°C (Case Tem Temp) 25°C (Case Temp) (Case 125°C
ase
3
mp
) se T emp
(Ca
se
I B= 1 0 0 m A
1
V CE( s a t ) 0 0.02 0.05 0.1
(C 125°C
5
5°
C
0
0
1
2
3
4
0.5
1
5
0
0
0.2
0.4
0.6
25°C
0.8
55°
125
Te
m
1
°C
C (C
(Ca
p)
ase
2
25°C
2
Te
Tem
p)
)
1.0
1.2
1.4
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 D C C u r r e n t G a i n h FE S w i t c h i n g Time ton·t s t g · t f ( µ s ) 7 5 V C C 200V I C: I B1: I B2= 1 0 : 1 : 2 1 0.5 t stg
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
4
125°C
25°C
55°C
1
10
t on
0.5 0.3
tf 0.1 0.2 0.5 1 5 6
5 0.02
0.05
0.1
0.5
1
56
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10 5 C o l l e c t o r Cur r e n t I C ( A )
10 0µ
Reverse Bias Safe Operating Area
20 10 5 30
P c T a Derating
s
M a x i m u m Power Dissipa t i o n P C ( W )
W ith
C o l l e c t o r Cur r e n t I C ( A )
20
In fin ite he at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=0.5A Duty:less than 1%
nk
0.5
W i t h o u t Heatsink N a t u r a l Cooling
0.5
10
W i t h o u t Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
121
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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