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Part: 2SC5100
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> NPN
Description:
Company: Sanken Electric Co.
Datasheet: Download 2SC5100 datasheet File size : 3353 kB
Request For quote: Find where to buy 2SC5100
Datasheet text preview:
2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 120 6 8 3 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) Ratings 10max 10max 120min 50min 0.5max 20typ 200typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15
02 1.05 +0..1 -
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
5.45±0.1 1.5 4.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.4 IB2 (A) 0.4 ton (µs) 0.13typ tstg (µs) 3.50typ tf (µs) 0.32typ
5.45±0.1 1.5
02 0.65 +0..1 -
3.35
B
C
E
Weight : Approx 6.5g a. Part No. b. Lot No.
I C V C E Characteristics (Typical)
350m
V C E ( s a t ) I B Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) 3
I C V B E Temperature Characteristics (Typical)
8 ( V CE= 4 V )
A
8
0m
20
15
0m
A
A
1
A 00m
75mA
C o l l e c t o r Current I C ( A )
2
50mA
C o l l e c t o r Current I C ( A )
6
6
4
4
mp)
mp)
Cas
°C (
2
2
(Cas
I B= 1 0 m A
I C= 8 A 0 2A 0.6 4A 0.8 1.0 0 0
0
0
1
2
3
4
0
0.2
0.4
0.5
30°C
25°C
125
(Case
1
e Te
20mA
e Te
Temp
1.0
)
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
B a s e Current I B ( A )
B a s e - E m i t t o r Voltage V B E ( V )
h F E I C Characteristics (Typical)
( V CE= 4 V ) 200 D C C u r r e n t G a i n h FE
h F E I C Temperature Characteristics (Typical)
( V CE= 4 V ) 200 125°C D C Curr e n t Gain h F E Transient Thermal Resistance j - a ( ° C / W ) 4
j - a t Characteristics
Typ
100
100
25°C 30°C
1
50
50
0.5
20 0.02
0.1
0.5
1
5
8
20 0.02
0.1
0.5
1
5
8
0.2
1
10
100 T i m e t(ms)
1000 2000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
f T I E Characteristics (Typical)
( V CE= 1 2 V ) 40 20 10
Safe Operating Area (Single Pulse)
80
P c T a Derating
C u t - o f f Fre q u e n c y f T ( M H Z )
30
M a x i m u m Powe r Dissipation P C ( W )
5
Typ
C o l l e c t o r Cur r e n t I C ( A )
DC
60
20
40
1 0.5 W i t h o u t Heatsink N a t u r a l Cooling
10
20
W i t h o u t Heatsink 0 0.02 0.1 1 E m i t t e r Current I E ( A ) 8 0.1 5 10 50 100 150 3.5 0 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
3.0
1.5
10 m s
10 0m
W
s
ith In fin ite he at si nk
127
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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