Details, datasheet, quote on part number: AK06
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes
CompanySanken Electric Co.
DatasheetDownload AK06 datasheet
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Some Part number from the same manufacture Sanken Electric Co.
CTB-24 Schottky Barrier Diodes ( Center-tap ) 40v
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APT6015JVR : 600V, 35A Power MOS V Transistor. Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source.

GA1L3N : Medium Speed Switching Resistor Built-in Type NPN Transistor.

HAF2001 : Power Termal MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

IRF5Y3205CM : 55V Single N-channel Hi-rel MOSFET in a TO-257AA Package. Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient.

IXTH88N15 : . Test Conditions to 150C; RGS 1 M Continuous Transient = 25C, pulse width limited by TJM 25C IS IDM, di/dt 100 A/s, VDD VDSS, = 25C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions.

POT : . ition under the component This mark indicates recogn oratories, inc. program of Underwriters Lab TYPE NUMBER POT120-01 POT120-02 TYPE NUMBER POT100-01 POT100-02 TYPE NUMBER Series Type Number Max. Repetitive Peak Reverse Voltage Max. DC Output Current. =100 C Max. DC Reverse Current @ PRV and 125 oC, IR Max. Peak Non-Rep.Surge Max.I2 t for Fusing <.

SD1553C18S20K : 1800V Fast Recovery Diode in a DO-200AC (K-Puk) Package. High power FAST recovery diode series 3.0 s recovery time High voltage ratings to 3000V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AC (K-PUK) Maximum junction temperature 150C Typical Applications Snubber diode.

04C1002FF : RESISTOR, TEMPERATURE DEPENDENT, NTC, 10000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, LEAD FREE ; Resistance Range: 10000 ohms ; Tolerance: 1 +/- % ; Standards and Certifications: RoHS.

050027R5AMZC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000075 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 7.50E-6 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

EPL3010-102MLB : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Inductance Tolerance:.

FDS6912AD84Z : 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0280 ohms ; Package Type: SO-8, SO-8 ; Number of units in IC: 2.

MA4T636533 : X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Number of units in IC: 1 ; Operating Frequency: 10000 MHz.

UMN1NTL : 0.025 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 25 mA ; RoHS Compliant: RoHS ; Pin Count: 5 ; Number of Diodes: 4.

1N4942GP-AP : 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

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