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Details, datasheet, quote on part number:FN812
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Datasheet text preview:
Power Transistor FN812
Absolute Maximum Ratings (Ta=25ºC)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 100 6 8 (pulse 12) 3 35 (Tc=25ºC) 150 55 to +150 Unit V V V A A W ºC ºC
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 4A, IB = 0.4A Ratings 10max 10max 100min 70min 0.3max
4
(Ta = 25ºC) Unit µA µA V V
External Dimensions FM20 (full-mold)
10.0 4.2 2.8
3.3
C 0.5
8.4
a b
16.9
VCC (V) 12
RL () 4
IC (A) 3
VBB1 (V) 10
VBB2 (V) 5
IB1 (mA) 30
IB2 (mA) 30
t on (µs) 1.0
t stg (µs) 2.0
tf (µs) 0.5
2.54 2.2
1.35 1.35 0.85 2.54
3.9
Typical Switching Characteristics
0.8
2.6
(13.5)
0.45
BCE
a) Type No. b) Lot No. (Unit : mm)
s IC -- VCE Characteristics (typ.)
300m A 20 0m A
8
s VCE (sat) -- IB Characteristics (typ.)
2
s IC -- VBE Temperature Characteristics (typ.)
8
15
0m
A
10
0m
A
75
mA
A 50m
6
6
VCE (sat) (V)
IC (A)
25mA 4
IC (A)
1
Ic = 3A Ic = 5A Ic = 1A
4
2
IB = 10mA
2
Tc = 55ºC 25ºC 75ºC 125ºC
0
0
1
2
3
4
0
5
10
50 100
500 1000 2000
0
0
0.5
1.0
1.5
VCE (V)
IB (mA)
VBE (V)
s hFE -- IC Characteristics (typ.)
500 (VCE = 4V)
s hFE -- IC Temperature Characteristics (typ.)
500 Tc = 125ºC (VCE = 4V)
s
j-a -- t
Characteristics
) ºC 25
50
(ºC/W)
Typ
j-a
100 50 30 0.01 0.05 0.1 0.5 1 5 8
100 50 30 0.01
75ºC 25ºC 55ºC
10 5 1 0.5
hFE
hFE
NO
FIN
= (Ta
Ta = 25ºC
Single Pulese 0.1 0.05 0.0002 0.001
0.05 0.1
0.5
1
58
0.01
0.1
1
10
100
IC (A)
IC (A)
t (sec)
s fT -- IE Characteristics (typ.)
30 Typ (VCE = 12V)
s Safe Operating Area (single pulse)
20
se 1m
s PC -- Ta Derating
40
natural air cooling Silicone grease Aluminum heatsink Unit: mm
10
10
c
5 20
30
ith W
10 0m
D. C (T
ms ec
se
fT (MHz)
PC (W)
c
c
IC (A)
=2
ite fin in
1 0.5
5º C)
20
20 0· 20 0·
nk si at he
10
2
10
100
· 10
0·2
Without heatsink
0 0.01
0.05 0.1
0.5 1
5 10
0.1
3
5
10
50
100
200
0
0
50
100
150
IE (A)
VCE (V)
Ta (ºC)
60
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