Details, datasheet, quote on part number: RH1C
PartRH1C
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Rectifiers
Description
CompanySanken Electric Co.
DatasheetDownload RH1C datasheet
Cross ref.Similar parts: RL1N4007
Quote
Find where to buy
 
  

 

Features, Applications
) is with Half-cycle Sinewave Heatsink Single Shot

(=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point)







 

Some Part number from the same manufacture Sanken Electric Co.
RH1Z
RH2D
RH2F
RH3F
RH3G
RH4F
RJ43
RK13
RK14
RK16
RK19
RK33
RK34
RK36
RK39
RK43
RK44
RK46
RK49
RL10Z
RL2
Same catergory

2SC5454 : NPN Epitaxial Silicon Transistor 4-pin Mini Mold. FEATURE High gain, low noise Small reverse transfer capacitance Can operate at low voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Bandwidth Product Reverse Transfer Capacitance Insertion.

BSS73DCSM : Screening Options Available = ;; Polarity = NPN ;; Package = LCC2 (MO-041BB) ;; Vceo = 300V ;; IC(cont) = 0.5A ;; HFE(min) = 40 ;; HFE(max) = 250 ;; @ Vce/ic = 10V / 30mA ;; FT = 50MHz ;; PD = 0.4W.

GL3504 : In-line High Current Silicon Bridge Rectifiers ( Voltage - 50 to 800 Volts Current - 15 to 35 Amperes ).

KSD215AC3 : Solid State Relay.

NP0H3A3 : Composite Transistors. Marking = 3C ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.08 ;; IC(Tr2)(A) = 0.08 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SSSMini6-F1.

NTE2367 : Silicon Complementary Transistors Digital W/2 Built-in 4.7k Bias Resistors.

NTE2562 : Silicon Complementary Transistors High Current Switch. NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch : The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high­ speed inverters, converters, etc. : D Low Collector­Emitter Saturation Voltage.

03029-BR101AKMCB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0001 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style:.

04025A : CAPACITOR, CERAMIC, MULTILAYER, 50 V, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

HK212510NJ : 1 ELEMENT, 0.01 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 300 milliamps ; Operating.

IRF3007STRL : 62 A, 75 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 75 volts ; rDS(on): 0.0126 ohms ; Package Type: PLASTIC, D2PAK-3 ; Number of units in IC: 1.

KTC3209O : 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TO-92, TO-92L, 3 PIN.

LFC32CBK005M : 1 ELEMENT, 0.005 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0050 microH ; Rated DC Current: 450 milliamps ; Operating.

MCH3382-TL-H : SMALL SIGNAL, FET.

PHT608C : 47 A, 800 V, SCR. s: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 47 amps ; IGT: 100 mA ; Package Type: MODULE-4 ; Pin Count: 4.

V120ZU05 : RESISTOR, VOLTAGE DEPENDENT, 102 V, 3 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Power Rating: 0.2000 watts (2.68E-4 HP) ; Operating DC Voltage: 102 volts ; Operating Temperature: -55 to 85 C (-67 to 185 F).

12103E : CAPACITOR, CERAMIC, 25 V, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: 10 to 85 C (50 to 185 F).

12CWQ06FN-G : 6 A, SILICON, RECTIFIER DIODE, TO-252AA. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 6000 mA ; RoHS Compliant: RoHS ; Package: DPAK, SIMILAR TO TO-252AA, DPAK-3 ; Pin Count: 2 ; Number of Diodes: 2.

180ME100FAZ : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 180 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 180 volts ; Leakage Current: 385 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

2N5210J18Z : 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TO-92, TO-92, 3 PIN.

 
0-C     D-L     M-R     S-Z