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Details, datasheet, quote on part number:SDH03
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Datasheet text preview:
SDH03
Absolute maximum ratings
Symbol V CBO V CEO VEBO IC ICP IB PT Tj T stg NPN 100 100 6 1.5
PNP + NPN Darlington H-bridge
(Ta=25°C)
External dimensions E
···
SD
Ratings PNP 60 60 6 1.5 2.5 (PW1ms, Du10%) 0.1 3 (Ta=25°C) 150 40 to +150 41.6
Unit V V V A A A W °C °C °C/W
2.5 (PW1ms, Du100%) 0.1
ja
sEquivalent circuit diagram
2 R 3 R4 1 15 16 13 14 3 R1 R2 4 8 11 12 9 10 7 6
5
R3: 4k typ R4: 100 typ
R1: 4k typ R2: 200 typ
Characteristic curves
IC-VCE Characteristics (Typical)
NPN
2.5
IB = 1 0 m A
A 4m
IC-VBE Temperature Characteristics (Typical)
PNP NPN
2.5
IB=5m
2m A
2.5
A 0.6m
0.4m A
(VCE=4V)
A
A mA 2m 1.2
1.2mA 1.0mA
2.0
2.0
2.0
0.8mA
0.3mA
IC (A)
1.5
1.5
0.6mA 0.5mA
1.5
IC (A)
0.5
0.5
0.3mA
0.5
0 1 2 3 4 5 6
0 0
1
2
3
4
5
6
0 0
1
Ta=
125 °C 75°C 25°C 30 °C
1.0
1.0
0.4mA
IC (A)
1.0
2
3
VCE (V)
VCE (V)
VBE (V)
hFE-IC Characteristics (Typical)
NPN
10000
(VCE=4V)
typ
PNP
10000 5000
(VCE=4V)
PNP
2.5
(VCE=4V)
5000
Typ
2.0
1000
1.5
IC (A)
hFE
hFE
1000
500
1.0
500
Ta=125°C 75°C 25°C 30°C
100 50
100 0.03 0.05 0.1 0.5 1 2.5
0.5
30 0.03
0.05
0.1
0.5
1
2.5
0 0
1
2
3
IC (A)
IC (A)
VBE (V)
hFE-IC Temperature Characteristics (Typical)
NPN
10000 5000
2 =1 5° C
PNP
(VCE=4V)
10000 5000
(VCE=4V)
Ta
7
C 5°
°C 25 C 0° 3
1000
Ta
1000 500
500
°C 25 =1 5°C 7 °C 25 C 0° 3
hFE
hFE
100 50 0.03 0.05 0.1
100 0.03 0.05
0.1
0.5
1
2.5
0.5
1
2.5
IC (A)
IC (A)
200
SDH03
Electrical characteristics
NPN Symbol min ICBO IEBO V CEO hFE V C E (sat) VBE(sat) 100 2000 12000 1.3 2.2 V V Specification typ max 10 3 Unit Conditions V CB = 1 0 0 V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA 60 2000 12000 1.4 2.2 V V Specification min typ max 10 3 PNP Unit Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA
(Ta=25°C)
µA
mA V
µA
mA V
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
NPN
3
3
j-a-PW Characteristics
PNP
50
NPN
VCE (sat) (V)
VCE (sat) (V)
ja (°C / W)
2
2
IC=2A
10
IC=2A IC=1A IC=0.5A
IC=1A
5
1
1
IC=0.5A
0 0.1
0.5
1
5
10
50
100
0 0.1
0.5
1
5
10
50
1 1
5
10
50 100
500 1000
IB (mA)
IB (mA)
PW (mS)
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
3
(IC / IB=1000)
PNP
3
(IC / IB=1000)
PNP
50
VCE (sat) (V)
ja (°C / W)
2
VCE (sat) (V)
2
10
0°C Ta=3
5
1
25°C
30°C
1
Ta=125°C 75°C
75°C
125 °C
25°C
0 0.2
0.5
1
2.5
0 0.2
0.5
1
2.5
1 1
5
10
50 100
500
1000
IC (A)
IC (A)
PW (mS)
Safe Operating Area (SOA)
NPN
5
10 0µ s
PT-Ta Characteristics
PNP
3
4 3
5
2
1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation
s 0µ 10
s 1m
1m
1
10 m s
1
2
IC (A)
0.5
0.5
PT (W)
1 0 0
IC (A)
s
s m 10
1
0.1
Single Pulse
0.05 Without Heatsink 0.03 Ta=25°C 3 5 10 50 100
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05 3
5
10
50
100
50
100
150
VCE (V)
VCE (V)
Ta (°C)
201
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