Details, datasheet, quote on part number: AK25GB40
PartAK25GB40
CategoryDiscrete => Thyristors
DescriptionAnti-parallel Thyristor Module
CompanySanRex Corporation
DatasheetDownload AK25GB40 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

UL;E76102 M Power Thyristor Module AK25GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings to 800V are available, and electrically isolated mounting base make your mechanical design easy. Isolated mounting base 25A, IT RMS 55A, ITSM 55A di/dt A/ s dv/dt 500V/ s Applications AC/DC motor drives Heater controls Light dimmers Static switches Internal Configurations

Tj 25 Item Ratings AK25GB40 400 Conditions Single phase, half wave, 180 conduction, Tc 97

Repetitive Peak Off-State Voltage Item Average On-State Current R.M.S. On-State Current Surge On-State Current It

Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward Peak Gate Voltage Reverse Critical Rate of Rise of On-State Current Isolation Breakdown Voltage R.M.S. Operating Junction Temperature Storage Temperature Mounting Torque Mass Mounting M6 Terminal M5 Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tj 25 A.C. 1 minute VD

IFGM VFGM VRGM di/dt VISO Tj Tstg

Symbol IDRM VTM IGT/VGT VGD tgt dv/dt IH IL Rth j-c Item Repetitive Peak Off-State Current, max. Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Thermal Impedance, max. Conditions at VDRM, Single phase, half wave, Tj 125 On-State Current Tj 25 Junction to case, per 1 2 Module Junction to case, per 1 Module 6V VD

50 Seaview Blvd. Port Washington, PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

 

Related products with the same datasheet
AK25GB80
Some Part number from the same manufacture SanRex Corporation
AK25GB80 Anti-parallel Thyristor Module
AK25HB120
AK55GB40
AK55HB120
AK90GB120
AK90GB160
AK90GB40 Anti-parallel Thyristor Module
AK90HB120
BKR400ABZ50
DBA100UA40
DBA100UA60
DBA200UA40
DBA200UA60
DCA100AA50
DCA150AA50
DD100GB40
DD100HB120
DD100KB160
DD110F120
DD130F120
DD160F120
Same catergory

1N961B : 10V, 0.5W Zener Diode. Power Dissipation Storage Temperature Range Operating Junction Temperature Lead Temperature (1/16" from case for 10 seconds) *These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory.

2SC3922 : NPN Epitaxial Planar Silicon Transistor, Switching Application. Applications Switching circuits, inverter circuits, interface circuits, dirver circuits. On-chip bias resistance R1=2.2K, R2=10k. Large current capacity : IC=500mA. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

BDW94 : PNP Silicon Power Darlingtons. Designed for Complementary Use with BDW93A, BDW93B and at 25C Case Temperature 12 A Continuous Collector Current Minimum hFE 5 A absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDW94 Collector-base voltage (IE BDW94C BDW94 Collector-emitter voltage (IB BDW94B BDW94C Emitter-base voltage Continuous collector current.

FK18SM-10 : Type = FK Series Fast Recovery Body Diode ;; Voltage = 500V ;; Rdson = 500 ;; Package = Obsolete ;; Drive Voltage = N/a.

FS14SM-16A : N-channel Power MOSFET High-speed Switching Use: 800v, 14a. APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th).

GT20G102 : Low Voltage < 600 Volts. Insulated Gate Bipolar Transistor Silicon N Channel Igbt.

MA2ZD18 : VRM(V) = 25 ;; IF(mA) = 500 ;; VFmax.(V) = 0.42 ;; IR(µA) = 200 ;; Package = SMini2-F1.

NDB410A : Enhancement N-Channel. N-channel Enhancement Mode Field Effect Transistor.

SRA2212M : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Collector.

A069R1F0.07 : RES NET,THICK FILM,9.1 OHMS,200WV,1% +/-TOL,-250,250PPM TC,4112 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

BDY47.MOD : 15 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

FDD5N50NZ : POWER, FET. RDS(on) 1.38 ( Typ.)@ VGS = 2A Low Gate Charge ( Typ. 9nC) Low Crss ( Typ. 4pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability ESD Imoroved Capability RoHS Compliant These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been.

 
0-C     D-L     M-R     S-Z